You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
7 January 2011InP lateral overgrowth technology for silicon photonics
Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform
for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we
can use the so called defect necking effect to filter out the threading dislocations propagating from the seed
layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of
silicon wafer. The obtained characterization results show that the grown InP layer has very high quality,
which can be used as the base for further process of active photonic components on top of silicon.