7 January 2011 Chirp characteristics of silicon Mach-Zehnder modulators
Author Affiliations +
Proceedings Volume 7987, Optoelectronic Materials and Devices V; 798707 (2011) https://doi.org/10.1117/12.888448
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China
Chirp characteristics of silicon based Mach-Zehnder-interferometer (MZI) modulators with PIN diode and PN diode are fully analyzed, respectively. Simulation result shows that the chirp parameter is negative and influenced by the carrier absorption effect, the amplitude and frequency of applied sinusoidal modulating signals
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuxin Wei, Yuxin Wei, Yong Zhao, Yong Zhao, Guoyi Li, Guoyi Li, Jianyi Yang, Jianyi Yang, Minghua Wang, Minghua Wang, Xiaoqing Jiang, Xiaoqing Jiang, } "Chirp characteristics of silicon Mach-Zehnder modulators", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 798707 (7 January 2011); doi: 10.1117/12.888448; https://doi.org/10.1117/12.888448


Franz Keldysh effect of Ge on Si pin diodes at...
Proceedings of SPIE (May 22 2013)
Ge/SiGe quantum well optical modulator
Proceedings of SPIE (May 07 2013)
All silicon approach to modulation and detection at λ =...
Proceedings of SPIE (February 22 2018)
High speed silicon optical modulator
Proceedings of SPIE (February 16 2010)

Back to Top