7 January 2011 The preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network
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Proceedings Volume 7987, Optoelectronic Materials and Devices V; 79870C (2011) https://doi.org/10.1117/12.888354
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China
Abstract
The strain field and elastic energy due to interfacial misfit dislocation networks near the free surface have been calculated analytically. The result predicted the preferential nucleation sites of self-assembled quantum dots with the influence of dislocation networks. Compared with Green function method, our solution is simple, direct and can solve the problem completely.
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Shuai Zhou, Shuai Zhou, Yumin Liu, Yumin Liu, Zhongyuan Yu, Zhongyuan Yu, "The preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870C (7 January 2011); doi: 10.1117/12.888354; https://doi.org/10.1117/12.888354
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