7 January 2011 Advances of AlGaN-based high-efficiency deep-UV LEDs
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Proceedings Volume 7987, Optoelectronic Materials and Devices V; 79870G (2011); doi: 10.1117/12.888927
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China
Abstract
We demonstrated AlGaN-based multi-quantum-well (MQW) deep-ultraviolet (UV) light-emitting diodes (LEDs) with wavelengths in the range of 222-351 nm, fabricated on low threading dislocation density (TDD) AlN template on sapphire. High internal quantum efficiency (IQE) of 50-80% was observed from AlGaN or quaternary InAlGaN MQWs by fabricating them on low TDD AlN templates. Also, an electron injection efficiency (EIE) was markedly improved by using multi-quantum barrier (MQB). Over 20 mW cw output power was obtained for 256-275 nm LEDs, which will be useful for sterilization applications. The maximum external quantum efficiencies (EQEs) were 1.8 and 2.75% for 247 and 270 nm AlGaN-LEDs, respectively.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideki Hirayama, "Advances of AlGaN-based high-efficiency deep-UV LEDs", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870G (7 January 2011); doi: 10.1117/12.888927; https://doi.org/10.1117/12.888927
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KEYWORDS
Light emitting diodes

Deep ultraviolet

Aluminum nitride

Sapphire

Quantum wells

Electron beam lithography

External quantum efficiency

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