7 January 2011 Self-assembled InAs/GaAs quantum dot molecules with InxGa1-xAs strain-reducing layer
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Proceedings Volume 7987, Optoelectronic Materials and Devices V; 79870N (2011) https://doi.org/10.1117/12.887835
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China
Abstract
Self-assembled lateral aligned InAs quantum dot molecules (QDMs) with InxGa1-xAs strain-reducing layer are grown on GaAs substrate by metal-organic chemical vapor deposition. The effects of growth temperature and In content of InxGa1-xAs on the structural and optical properties of QDMs are investigated by using atomic force microscopy and photoluminescence. It is found that through appropriately selecting growth parameters, QDMs composed of two closely spaced InAs QDs are formed, and a redshift of emission wavelength and wideband photoluminescence spectra of QDMs are observed, which make QDM a potential candidate for broadband optical devices.
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Y. Yu, L. R. Huang, P. Tian, D. X. Huang, "Self-assembled InAs/GaAs quantum dot molecules with InxGa1-xAs strain-reducing layer", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870N (7 January 2011); doi: 10.1117/12.887835; https://doi.org/10.1117/12.887835
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