7 February 2011 Amplification and lasing at M-band of luminescence
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Proceedings Volume 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies; 799404 (2011) https://doi.org/10.1117/12.881507
Event: International Conference on Coherent and Nonlinear Optics (ICONO 2010) and International Conference on Lasers, Applications and Technologies (LAT 2010), 2010, Kazan, Russian Federation
Abstract
A new lasing mechanism for semiconductors like CuCl, CuBr is proposed based on the two-photon pumping of biexcitons from the ground state of the crystal and generation or amplification of light in the region of M-band of luminescence due to the optical exciton-biexciton conversion. It was shown that the net gain essentially depends on the level of two-photon pumping and rapidly decreases deep into the crystal due to the spatial depletion of pump radiation. Estimations for CuCl give the values of lasing photons with the energy about 3,2 eV and the maximum small signal gain about the value of the exciton absorption coefficient.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. I. Khadzhi, P. I. Khadzhi, I. V. Beloussov, I. V. Beloussov, N. N. Rosanov, N. N. Rosanov, S. V. Fedorov, S. V. Fedorov, D. A. Markov, D. A. Markov, A. V. Corovai, A. V. Corovai, } "Amplification and lasing at M-band of luminescence", Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799404 (7 February 2011); doi: 10.1117/12.881507; https://doi.org/10.1117/12.881507
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