8 February 2011 Laser-based processes of ion implantation for Pt+/SiC gas sensor formation
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Proceedings Volume 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies; 799411 (2011); doi: 10.1117/12.881043
Event: International Conference on Coherent and Nonlinear Optics (ICONO 2010) and International Conference on Lasers, Applications and Technologies (LAT 2010), 2010, Kazan, Russian Federation
Abstract
A relatively simple technique of high-energy ion implantation of the pulsed laser plasma under the influence of an external pulsed electric field is suggested. The developed mathematical model allows forecasting depth distribution of implanted atoms on the basis of experimental measurements of fundamental physical characteristics of the pulsed laser plasma and the technical parameters of high-voltage system. The possibility of implantation of platinum ions from laser plasma to create on-chip n-SiC hydrogen sensor for use in complicated conditions is demonstrated.
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V. Yu. Fominski, A. G. Gnedovets, R. I. Romanov, M. V. Demin, "Laser-based processes of ion implantation for Pt+/SiC gas sensor formation", Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799411 (8 February 2011); doi: 10.1117/12.881043; https://doi.org/10.1117/12.881043
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KEYWORDS
Ions

Plasma

Pulsed laser operation

Ion implantation

Platinum

Silicon carbide

Chemical species

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