This PDF file contains the front matter associated with SPIE Proceedings Volume 7995, including the Title Page, Copyright information, Table of Contents, Introduction (if any) and the Conference Committee listing.

Indium tin oxide (ITO) thin film with SiO₂ protective upper layer prepared by electron beam evaporation was annealed in air up to 300°C. Evolution of transmittance, resistance and surface morphology of this SiO₂/ITO coating was studied. Transmittance in visible and near-infrared range both increased while absorption edge exhibited red shift after annealing. Resistance increased monotonously with rising annealing temperature, yet increments became smaller at temperatures above 270°C. Micron-defects were observed on the surface of SiO₂/ITO coating after annealing. Enhancement of crystallinity of ITO layer at high temperatures was thought to be responsible for these morphology and resistance evolutions.

We outline experimental data recently established in our study of in-situ arsenic (As) doped narrow-gap Hg_1-xCd_xTe films by infrared modulation spectroscopy. After a brief introduction of the step-scan Fourier transform infrared spectrometer-based modulation spectroscopic techniques, impurity levels and photomodulation mechanisms in As-doped HgCdTe epilayers are surveyed based on infrared modulation spectroscopic data, and the possibility of identifying cut-off wavelength and vertical uniformity of HgCdTe epilayers is indicated. The results illustrate that the infrared modulation spectroscopy will play an important role in optical characterization of narrow-gap semiconductors.

The phase transitions and the temperature dependent electronic properties of Bi_3.25La_0.75Ti₃O₁₂ (BLT) film have been studied by transmittance spectra from 80 to 480 K. Anomalies of the optical constants are observed at 160 K and 300 K, which can be ascribed to the phase transitions. The optical properties of SrBi_2-xNdxNb₂O₉ (SBNN) ceramics with the Nd concentrations from 0 to 0.2 have been investigated by Raman scattering spectra and spectroscopic ellipsometry. It can be found that the lattice vibrations slightly depend on the Nd concentrations. Moreover, the optical band gap linearly increases with the Nd concentrations due to charge compensation by the Nd doping.

A novel soluble poly(phenylethanone) derivative grafted with tetra-acyl-chlorich manganese phthalocyanine (TACMnPc) was synthesized via esterification and characterized by electronic absorption spectrum and fluorescence spectra. The derivative (PPE-MnPc) exhibits high solubility and excellent film-forming property. Electronic absorption spectrum of the polymer exhibits a Q-band peak positioned at about 736 nm, which is obviously red shifted compared with 2, 9, 16, 23-tetra-carboxyl manganese(II) phthalocyanine (TCMnPc). PPE-MnPc films were prepared by dip-coating technology. Photoconductivity of PPE-MnPc films was characterized by current-voltage measurement. At bias voltage of 20 V, photoconductivity of the film was 6.8×10^-9 S and dark conductivity was 7.5 ×10^-10 S. The electrical conductivity of PPE-MnPc films under irradiation was nine times higher than that in the dark, which indicated that PPE-MnPc had a good photovoltaic response.

TiW alloy is not only a excellent infrared radiant material, but also a infrared sensitive material, and was often used as a film in the infrared thermal imaging detectors. The temperature coefficient of resistance (TCR) of TiW alloy film is an important parameter influencing the characteristic, so it is very necessary to study the effect of TiW alloy films deposition parameters on TCR. In this paper, TiW alloy films were deposited by DC magnetron sputtering on ordinary glass, and the target is high pure TiW alloy material ((Ti:W)atom=3:7), the working gas is Ar. The square resistance of TiW alloy films under the different temperature was measured using four-point probe meter, and TCR was calculated according to the measurement curve. The influence of working pressure, Ar flow rate and sputtering current on the TCR of TiW alloy films was investigated. After studying, the best process parameters were obtained, that are, sputtering current 0.32A, working pressure 0.8Pa, and Ar flow rate 60sccm. Under these condition, TCR of TiW alloy films is 2‰/K. The measurement results indicate that the time stability of TiW alloy films is excellent.

Degenerate pump-probe experiments have been performed on the dynamics of carrier and phonon in GaInNAs thin films. The time-resolved differential transmission shows a negative value, indicating photoinduced absorption from the trap states. After the negative minimum the differential transmission recovers to zero with a long time constant. Rate equation has been employed to simulate the carrier dynamics. The calculations fit the experimental differential transmission very well. The extracted time constants show that the carriers in the trap states of GaInNAs decay to equilibrium with a single time constant of 1.2 ns. An obvious modulation of the transmission signal has been observed superimposing on the photoinduced absorption. Such a modulation is found at a low frequency of 380 GHz by Fourier transform. This low frequency oscillation might be attributed to coherent longitudinal acoustic (LA) phonon.

A numerical and analysis method for optimizing multilayer supermirrors is developed based on the combination of the power-law method and the local optimization method of simplex algorithm. The parameters in the power-law formula are optimized by genetic algorithm. This allows a global minimization of the merit function and a many-fold decrease of the computing time. Several groups of X-ray supermirrors with the energy extended to 30 keV are successfully designed using this optimization method for a hard X-ray telescope. Tungsten and boron carbide are chosen as the multilayer materials. High reflectivity and high effective area are obtained, indicating that this numerical and analysis method is an effective tool to design hard X-ray supermirrors.

Chirped Mo/Si multilayer mirrors used in 13-17nm region have been designed using analytical approach based on the combination of genetic algorithm and simplex algorithm. The Cauchy equation and the polynomial expression were used to fit the real part and the imaginary part of the optical constants of Mo and Si in the wavelength region of 12.8-17.2nm, respectively. The reflectivity, reflective phase, group delay and group delay dispersion of the multilayer were calculated based on the Fresnel iterative equations. The initial structure of the multilayer was obtained by using the genetic algorithm, and the final structure of the mirror was optimized by using the simplex algorithm. We got the different multilayer mirrors for the target GDD of -2800 as², -3600 as², and -6500 as². For these three multilayer mirrors, the average reflectivities in the wavelength range of 13-17 nm are 7.00± 0.08 %, 5.99 ±0.05 %, and 6.00±0.05 %, respectively. And the average GDD in the same wavelength range are -2793.22±104.00 as²,-3597.44±79.06 as², and - 6498.13±59.96 as². In addition, the effects of the interface roughness on the reflectivity and the phase were discussed. It is found that the reflectivity is sensitive to the interface roughness, but the phase is insensitive.

Cu(In,Ga)Se₂ (CIGS) thin films have been prepared by radio frequency (RF) magnetron sputtering from a CuIn_0.8Ga_0.2Se₂ target. The effects of in-situ annealing in Ar atmosphere on phase structure, composition and surface morphology of the films have been investigated by X-ray diffraction (XRD), energy dispersive analysis of X-rays (EDAX), atomic force microscopy (AFM) and Raman spectroscopy. XRD patterns show that both as-deposited and annealed films have a chalcopyrite structure with strong (112) preferred orientation. The annealed films display a higher degree of crystallinity and smoother surface, while there is little difference in grain size for films annealed at temperatures ranging from 300°C to 500°C. Results of EDAX reveal that the films are near to stoichiometry. Raman spectrum of the films annealed at 300°C shows only the CIGS A1 mode peak indicating the formation of single-phase chalcopyrite with enhanced crystalline ordering. The films annealed at higher temperatures exhibit a non-chalcopyrite mode at around 260 cm^-1 assigned to Cu_2-xSe secondary phase which is detrimental to CIGS solar cells.

We theoretically show that a one-dimensional finite all-dielectric periodic structure composed of symmetric unit cells can possess a broad flattop transparent photonic band. In contrast to the conventional viewpoint that the thickness of the truncated photonic crystals affects the transmission within the pass band, the transparent photonic band is insensitive to the change of the periodic number since the equivalent refractive indices of our structures can be nearly equal to that of the background in a wide frequency range. With easy fabrication, this broad flattop transparent photonic band will play an important role in the broadband filtering.

Mesoporous nanocrystalline ZnO applied to a-Si/mesoporous tandem solar cell was synthesized through the hydrothermal method. The structures and morphologies were characterized by X-ray Diffraction (XRD), Transmission Electron Microscopy (TEM) and Brunauer-Emmett-Teller (BET) analysis based on the nitrogen adsorption isotherm. The test results indicated that the samples had an average pore size of 17 nm and the BET specific surface area was approximately 37.5 m²/g. The transparent a-Si film on fluorine-tin-oxide (FTO) coated glass was obtained by chemical treatment and was used to structure a-Si/mesoporous ZnO tandem solar cell. Under AM 1.5 irradiation, the a- Si/mesoporous tandem solar cell had an open circuit voltage (Voc) of 560 mV, a short circuit current (Jsc) of 3.61 mA/cm² and a conversion efficiency of 0.28%. The conversion efficiency of tandem solar cell was improved obviously than that of the transparent a-Si film, which had lost special solar cell properties in chemical processing.

It is an important way to improve carrier mobility by reducing the contact resistance in organic transistors. In this paper, two kinds of transistors were fabricated with copper phthalocyanine semiconductor. Then by experimental methods, we tested the devices with different structure and different channel length, and analyzed the effect of structure on contact resistance as well as output characteristic. The results demonstrate that gate voltage can effectively reduce the contact resistance in the top contact device.

The phosphorous (P)-doped hydrogenated amorphous silicon (a-Si:H) thin films were crystallized by a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser with laser beam shaping system introduced by a fly-eye lens array. The correlations among crystallization, stress and microstructures with surface morphology during crystallization process can be determined. The increased crystalline fraction (X_C) is realized by a considerable stress release. It is observed that the periodic two dimensional grid patterns with the period of about 15 μm are formed at laser energy density (E_L) of 740 mJ/cm² and are very sensitive to the energy density. Further increasing laser energy density to laser ablation can give rise to the irradiation damage on the film with poor crystalline quality and high surface roughness.

WO₃ has emerged as one of the most extensively studied materials because its gasochromic effect can be used for smart window and gas sensor; currently it is widely used in many energy conservation areas. Compared with other preparations methods for gasoschromic films, sol-gel process shows several advantages, such as low cost and large-scale applications. However, sol-gel WO₃ films were not stable enough for commercial application yet. In this paper, we first investigated the effect of SiO₂ doping, which exhibited good enhancement of WO₃ gasochromic films' stability. We also examined the relationship between SiO₂ ratio and stability of WO₃/SiO₂ films. An empirical formula was established by fitting exponential decay of the coloring-bleaching cycles for four different Si/W ratios.

Pyroelectric lead lanthanum zirconnate titanate (PbLa₈Zr₆₅Ti₃₅) thin films were prepared by a metal-organic decomposition (MOD) method on Pt(111)/Ti/SiO₂/Si(100) substrate. After annealing at different temperatures with the same annealing time, the amorphous films were transformed into polycrystalline PLZT films. The phase formation and surface microstructure were investigated by X-ray diffraction (XRD) and atom force microscopy (AFM). The XRD data showed the formation of pervoskite phase at 650°C and indicated suppression of pyrochlore phase as temperature increasing. The PLZT pyroelectric sensor was fabricated based on sensitive barrier layer instead of the other type barrier layer. Finally, dielectric and pyroelectric coefficients was also measured.

Spectroscopic ellipsometry was used to extract the optical properties of Ba_0.4Sr_0.6-xMn_xTiO₃ (BSMT) (x from 1% to 20%) ceramics in the 0.7-4.7 eV (260-1700 nm) photon energy range at room temperature. X-ray diffraction analysis showed that BSMT ceramics are polycrystalline and lattice constants with different Mn composition present a slight variation. By reproducing the experimental ellipsometric spectra (Ψ and Δ), the optical constants and optical band gap energy have been obtained. It was found that the refractive index n increases first and then decreases as the photon energy increases from 0.7 to 4.7 eV for all the samples. The extinction coefficient k increases with increasing photon energy. On the other hand, both n and k decrease with increasing doping level of Mn (x ≤ 5%). Direct optical band gap energy is estimated to be 3.45-3.71 eV owing to different Mn doping. The difference of the optical properties can be ascribed to structure distortion with different Mn composition. The present results could be useful for future application of (Ba,Sr)TiO₃-based optoelectronic devices.

High VI/II transport rate ratio for Al-doped ZnTe homoepitaxial layers grown by metalorganic vapor phase epitaxy leads to distinct shallow and deep donor-acceptor-pair (DAP) emissions in the photoluminescence spectrum together with donor-related bound excitonic emission (I_d), independent of the growth conditions. From the analysis of excitation power dependence of shallow DAP emission, donor and acceptor levels are estimated to be ~19.5 and ~53.5meV for Al-doped ZnTe layer, respectively. Thermal quenching effects of Id and shallow DAP were examined based on two step quenching processes, and the derived donor ionization energy is of ~ 19 meV and acceptor level is of ~52.8 meV, which are in good agreement with the result on its excitation power dependence for the latter case.

Transition metal oxide (TMO) has been extensively focused in recent years. In this paper, we investigate the optical properties of a typical TMO material of Ni_(1-x)Mn_(2+x)O₄ (x=0-1) thin films. Different compositions of x=0, 0.1, 0.2, 0.3 thin films are grown on Pt/Ti/SiO₂/Si substrates by chemical solution deposition method under annealing temperature of 750°C. X-ray diffraction patterns indicate that Ni_(1-x)Mn_(2+x)O₄ thin films are polycrystalline with spinel structure. The optical properties are investigated using spectroscopic ellipsometry at room temperature in the wavelength range of 400-1700nm. By fitting the measured ellipsometric data with a three-phase model (air/sample/Pt), the optical constants of thin films are determined. The refractive index and extinction coefficient don't show apparent variation with different composition. The obtained optical constants are very significant in the potential applications of optoelectronic devices.

The influence of different triangular grating shapes on the absorption performance of the thin-film silicon solar cell is discussed in this paper. A finite difference time domain method is used to make the numerical simulation. By studying the shape of the triangular grating, the designs of structure are optimized to achieve higher short circuit currents and quantum efficiencies. We find that the blaze grating structure is the ideal initial texture for thin-film solar cells. Compared with the triangular grating, the short circuit current of the blaze grating is improved by 7.09% for the entire spectrum. The short circuit current for the short wavelength is increased by 13.5% whereas the short circuit current in the red and infrared part of spectrum is increased by 86.5%.

Structures containing metamaterials are considered. We mainly investigate the influence of spacer layer's thickness and metamaterials's damping term to the dips appearing in the attenuated total reflection (ATR) spectrum. It is found that the layer thickness and material's damping term have great impact on the surface resonance modes and the dips which appear in ATR spectrum. The results show that in order to observe the dips by using ATR, for the metamaterials, we should select proper values of damping term and spacer's thickness.

Sn, Al, Y-doped mesoporous ZnO(doping with 5 at.%) thin films (M-ZnO-5%X, X= (Sn, Al, Y))with regular mesoporous structures were successfully prepared through sol-gel and spin-coating methods, as evidenced from small angle X-ray diffraction (SAXRD) and scanning electron microscopy (SEM). The diameter/d value is about 8 nm calculated by Bragg equation. Influences of ion-doping on the photoluminescence spectra of mesoporous ZnO thin films were investigated. The energy gaps of Y, Al, Sn-doped mesoporous ZnO increase from 3.0 eV (the energy gap of undoped ZnO thin film) to 3.05, 3.08 and 3.15 eV, respectively. Dye-sensitized solar cells (DSSCs) based on Sn, Al, Y-doped ZnO photoelectrodes were structured and the properties of the cells were studied. Compared with undoped ZnO film, M-ZnO-5%Sn film showed higher solar-to-electric conversion efficiency, which may come from the broader absorbance.

Primary reflector of the optical antenna is a key component in the space laser communication systems, and multi-wavelengths laser need to be worked in the common aperture. Reflection coating is designed for the primary reflector of a laser communication system, which can work at three wavelengths (633nm, 808nm, 1550nm), the designed target reflectance are R_633nm≥50%, R_808nm≥99% and R_1550nm≥99% at angle of incidence from 0 to 20 deg. We selected Ta₂O₅ and SiO₂ as the high refractive index and low refractive index coating materials, analyzed the impact on the reflection coating of the systemic errors and random errors, and determined the manufacture error of the coater system which can't greater than 1%. The Ion beam sputtering deposition technique was used to manufacture reflection coating for three-wavelengths and a LAMBDA900 spectrophotometer was used to analysis the reflectance at three wavelengths which achieved the design requirements. Finally we give the origin of manufacture error source for this high reflection coating. The reflection coating component was successfully used in the primary reflector of the optical antenna of the laser communication systems.

A model using Ansys software was established to simulate electrical parameters of solar cell when incident sunlight radiated on its surface. In the model, solar cell electrical parameters were experimentally characterized as the solar cell was exposed through hollow out mask. The experimental and numerical photovoltaic performances were completely matched. The results showed that the central field of solar cell had higher efficiency than the edge field of which on the same area exposed to sunlight. The results also showed that surface uniformity and edge recombination were two important loss mechanisms, which decreased solar cell efficiency.

We present the results of the thermal stability of Mg/Co multilayers in the EUV range. The annealing study is performed up to a temperature of 400°C. The X-ray reflectivity at 0.154 nm is used in order to determine the structural parameters (thickness, roughness and density) of the layers. The measurements of the EUV reflectivity around 25 nm show that the reflectivity decreases when the annealing temperature increases above 300°C. X-ray emission spectroscopy is performed to determine the chemical state of the Mg atoms within the Mg/Co multilayer. The results show a small oxidation after annealing at 305°C, which increases greatly at 400°C. Scanning electron microscopy images of cross sections of the multilayer show a change of the surface morphology above 305°C. This large change of morphology and the oxidation explain the large reflectivity loss.

The influence of micron-sized nodules on the electric-field enhancement in the HfO₂/SiO₂ thin-film polarizers with non-quarter- wave layers at 1053nm and 56° is studied using the finite-difference time-domain electromagnetic modeling. The theoretical results show that the electric-field enhancements in HfO₂ material are greater at s polarization than those at ppolarization. Nodular defect originating from the large, shallow seed leads to the highest electric-field enhancement while that containing the small, deep seed leads to the lowest electric-field enhancement. The TFP coating designed with the electric-field peaks located in the SiO₂ layers has no obvious advantage in decreasing the laser-induced damage than that designed with the electric-field peaks located in the HfO₂ layers, once they have the similar nodular defects in them.

Growing interest in organic molecular semiconductors is stimulated by their promising applications in flexible devices. Pentacene is a benchmark organic semiconductor material because of its potential applications in high mobility thin film transistors and optoelectronic devices. Highly uniform monolayers of pentacene grown on polymeric substrate of poly alpha-methylstyrene exhibit sharp and intense free exciton (FE) luminescence at low temperatures. The FE emission displays characteristic intensity that grows quadratically with the number of layers. Large enhancements of Raman scattering intensities at the FE resonance enable the first observations of low-lying lattice vibrational modes in films reaching the single monolayer level. The low-lying modes exhibit characteristic changes when going from a single monolayer to two layers, revealing that a phase akin to a thin film phase of pentacene already emerges in structures of only two monolayers. A simple analysis of mode splittings offers estimates of the strength of inter-layer interactions. The results demonstrate novel venues for ultra-thin film characterization and studies of interface effects in organic molecular semiconductor structures.

Thin films of V₂O₅, especially vanadium oxide films with nano- and micro-structures, perform well as cathode material for Li ion batteries and charge storage devices. Thin films of V₂O₅ with different porosity were obtained by dip-coating sol-gel technique. V₂O₅ sols were prepared by dissolution of V₂O₅ powder in benzyl alcohol and isopropyl alcohol in proper proportion. Optical property and porosity of films were characterized by FTIR and ellipsometer. Electrochemical characterization was recorded by chronopotentiometry(CP) and cyclic voltammetry(CV). Furthermore, the study shows that the porous structures of V₂O₅ films had an effect on the stability and reversibility of the films.

Amorphous silicon oxide, silicon oxynitride and silicon nitride films were deposited in a PECVD reactor using silane (SiH₄),ammonia (NH₃) and nitrous oxide (N₂O) as precursor gases. The N₂O/NH₃ flow ratio was varied in order to obtain different oxynitride compositions. The films were characterized by spectroscopic ellipsometry, XPS and FTIR spectroscopy. The compositions and infrared optical absorption properties of the three different types of films were investigated and compared. Special attention was paid to analyze the Si-O/Si-N bond stretching absorption including the absorption band intensity. It was found that the silicon oxynitride films show a dominant infrared stretching band due to the Si-O/Si-N bond , with the infrared absorption peak located between 860cm^-1(11.6μm) for Si-N bond in silicon nitride and 1063cm^-1(9.4μm) for Si-O bond in silicon oxide. The position of peak also shifts to a shorter wavelength when increasing the N₂O/NH₃ flow ratio. The infrared optical absorption properties of the silicon oxynitride films make them well suited for the absorber of uncooled microbolometer detectors

Uniform and crack free Tb³⁺ doped lutetium oxide (Lu₂O₃:Tb) films were prepared by Pechini sol-gel method combined with the spin-coating technique. The influence of the different substrate (monocrystalline silicon (111) and silica glass) and atmosphere (N₂ and Air) on the luminescence properties of films was investigated. According to the emission spectra, we found that the luminous intensity was higher on silica glass substrate. Moreover, it was found that the luminous intensity calcined in N₂ was higher almost twice as that calcined in air.

The hydrophobic and transparent SiO₂-Al₂O₃ composite films were prepared by the sol-gel process using tetraethoxysliane (TEOS) and aluminium isopropoxide Al(C₃H₇O)₃ as precursors, methyltriethoxysilane (MTES) and cetyltrimethylammonium bromide (CTAB) as chemical modifier and surfactant respectively. Optimum condition for the SiO₂-Al₂O₃ nano-composite films with hydrophobic and transparent as well as mechanical properties simultaneously is investigated. It was found that the Si/Al molar ratio should be 1:0.008 and the calcined temperature should be 300°C. The infrared spectra of the films indicated that the hydrophobic surface of the film was due by the introduction of the methyl groups.

Wideband reflector and bandpass filter are obtained by using a Ge subwavelength periodic membrane with the thickness kept constant at 3.20 μm. The strong refractive-index modulation of the Ge subwavelength periodic membrane yields increased bandwidth of the leaky mode resonances, thus the excitation of the leaky mode resonances TE_1,1, TE_2,1, and TE_3,0 may interact to form a broad reflection band or a transmission passband near λ=10.60 μm.

Near-infrared-ultraviolet optical properties of Sn_0.925Mn_0.075O₂ (SMO) film grown on c-plane sapphire substrate have been investigated by the transmittance spectra in the photon energy of 0.45-6.5 eV (190-2650 nm) from 5.3-300 K. The optical constants have been extracted by fitting the experimental data with the Adachi's model. The optical band gap of the film can be estimated from the relation (αE)²proportional to(hυ-E_g). It is found that the absorption edge shifts to a lower energy side with increasing the temperature and the band gap E_g decreases from 3.80 to 3.72 eV. The parameters α_B and θ_B of the Bose-Einstein model are 45.4 meV and 221.8 K, respectively, which could be ascribed to the thermal expansion of crystal lattice and the carrier-phonon interaction. The band narrowing coefficient dE_g/dT of the SMO film is estimated to be -3.92x10^-4 eV/K at room temperature.

Tb³⁺-doped Lu₃Al₅O₁₂(hereinafter referred to as LuAG:Tb) films were successfully prepared by Pechini sol-gel process and spin-coating technique on carefully cleaned (111) silicon wafer. The microstructure and optical properties of the LuAG:Tb films were studied by X-ray diffraction (XRD), atomic force microscopy(AFM), as well as photoluminescence (PL) spectra. The XRD results showed that the precursor films started to crystallize at about 900°C. All as-calcined LuAG:Tb films showed the Tb³⁺ characteristic emission bands.

Mutilayers are important optical elements and widely used for extreme ultraviolet astronomical observation. For selecting the emission line multilayers should have high reflectivity and narrow spectral bandwidth. In this paper, six different multilayers including Si/C, Si/B₄C, Si/Mo/B₄C, Si/SiC, Mg/SiC and Mo/Si were designed for normal incidence angle of 5° at He-IIemission line(λ=30.4 nm). These multilayers have been fabricated using a direct current magnetron sputtering system. The period of multilayers were measured by X-ray diffractometer(XRD) and the reflectivities were measured on National Synchrotron Radiation Facility in Hefei, China. Then the reflectivities and the spectral bandwidth of these multilayers were compared respectively. It shows that the spectral bandwidth of multilayers of low Z materials is narrower than that of the normal Mo/Si multiayer, the reflectivity of Si/Mo/B₄C multilayer is higher than that of Si-based multilayers of two kinds of materials. And Mg/SiC multilayer has the highest reflectivity of 43.81% and the narrowest spectral bandwidth of 1.44nm, which proves that Mg/SiC multilayer is more potential for selecting the emission line in extreme ultraviolet solar physics.

Diamond-like carbon (DLC) films were deposited by the Unbalanced Magnetron Sputtering(UBMS) technique which was under the conditions of bias 80V, target current 110A, argon flow 200SCCM, excitation current 100A; experimental platform was built for Laser-induced damage threshold(LIDT). The DLC films was irradiated by the laser (Wavelength 1046nm, pulse width 10ns, laser energy from 0.75mJ/cm²-2.60J/cm²), we got the LIDT of the DLC films is 1J/cm². The whole physical process from slight burning, spalling, crack splashing until the substance damage of the DLC films was observed by 1000 times magnification and interference microscope. Thermal stress is one of main factors that laser injures films.

Anatase Ti_1-xFe_xO₂ (x=0, 1%, 2%) nanocrystalline films were prepared on quartz substrates by a facile nonhydrolytic sol-gel route. The structure and optical properties have been studied by X-ray diffraction (XRD), Raman scattering, transmittance spectra and temperature dependent photoluminescence (PL). The B_1g, E_g and (A_1g+B_1g) modes of anatase phase TiO₂ can be observed in Raman spectra. Dielectric functions have been extracted by fitting the transmittance spectra in the photon energy range of 0.5-6.5 eV with Adachi's model. The pure TiO₂ film displays a strong broadening visible luminescence band; however, Fe-doped samples exhibit a very weak luminescence due to the increase of oxygen vacancy concentration in TiO₂. With the temperature increases, the PL intensity decreases monotonously and there are five emission peaks for the pure sample in low temperatures, which could be attributed to oxygen vacancies, surface states and F⁺ center.

In this paper we study chemical bath deposition of ZnS thin films on glass slides with two different kinds of systems, that is, hydrazine hydrate system (N₂H₄•H₂O/NH₃•H₂O/SC(NH₂)₂/ZnSO₄) and citric acid system (C₆H₈O₇/NH₃•H₂O/ SC(NH₂)₂/ZnSO₄) in aqueous solution. The properties of ZnS thin films are characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The optical band gap is calculated from transmission spectra. The results show that ZnS thin films in citric acid system have better crystallization, higher transmittance and much lesser white spots which might be colloidal particles sedimentation mixed with ZnS, indicating that ZnS thin films prepared using citric acid system being more suitable for the buffer layer of CIGS solar cells.

Mg-doped Ce_0.5Zr_0.5O₂ nanocrystalline powders were prepared via hydrothermal method through homogeneous nucleation at 453K followed by calcinations at 673K. The effect of Mg-doping concentrations on the structure and performances of Ce_0.5Zr_0.5O₂ was studied. The results showed that Mg-doped Ce_0.5Zr_0.5O₂ was a single fluorite-type phase and the size was about 4nm. The introduction Mg into the Ce_0.5Zr_0.5O₂ lattice limited the mobility of oxygen and made the specific surface area and oxygen storage capacity(OSC) declined at doping constant less than 4mol%; as more than 4mol%, a segregation of Mg was dispersed on surface of Ce_0.5Zr_0.5O₂ and improved the thermal stability of surface, thus enhanced the OSC performance.

In this work, a-SiC:H films have been fabricated in plasma enhanced chemical vapor deposition system by controlling the gas flux ratio R of methane to silane and subsequently annealed in N₂ atmosphere for 1 h at the temperature of 1000°C. Raman spectra showed the formation of Si nanocrystals embedded in amorphous SiC matrix after annealing. Room temperature visible electroluminescence was achieved due to the recombination of electron-hole pairs in Si nanocrystals for the annealed samples. The current-voltage relationships were also investigated and the tunneling mechanism was discussed based on the carrier transport properties.

Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed by thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The films showed strong (040) crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity of 5 Ω•cm.

The influence of the rugate filter index profile function parameters, such as refractive index amplitude, film thickness and reference wavelength on the minus filter transmission spectrum, were investigated in this paper. The results show that the rejection bandwidth was affected by the refractive index amplitude, the depth of attenuation region was influenced by the film thickness, and the position of cut-off wavelength was determined by the reference wavelength. The method using the Rugate theory to design minus filters was presented, and several kinds of minus filters were designed using the method.

In this paper, we present a new tunable orthogonal grating consisting of two weakly modulated subwavelength gratings perpendicularly to one another. Using the rigorous coupled-wave analysis (RCWA), we calculate and analyze the characteristics of guided-mode resonance on incident angle for TE/TM polarization. We demonstrate that a wide range tunability of such structure accomplished with only a nanoscale variation of the spacing between the gratings. For a normally incident wave of both TE and TM polarization, the structure turns out the same spectrum and resonance peaks. A gap of reflection peaks is found, and electric field distributions manifest that this gap is due to the interaction between the leaky modes of TE₀-TE₀, TM₀-TM₀ or TE₀-TM₀. We investigate the reflection efficiency of TE/TM polarization as a function of the wavelength with the angle of incidence as a parameter. As incident angle increases, the separation of the resonances increases also. At the same time, some specific wavelengths are maintained.

Detailed design for nanoparticle plasmons-enhanced solar cells is presented in this article. Optimal structure for the max enhancement from the nanoparticle arrays is investigated by varying the size, shape and period of the nanoparticle, and thickness of Si absorber. Tolerance of the nanoparticle arrays provides guidance for fabrication in practice. Contribution of front and back structure as well as the nanoparticle arrays to the photocurrent is analyzed respectively. After optimization short circuit current density attains 20mA/cm² with a 185% enhancement compared to that of the 700nm thick Si.

This paper presents the design and fabrication of several versions of structured thin films (STF). One kind of STF is a sculptured thin film, generally deposited with a glancing angle deposition technique. Several optical components were designed and fabricated using this technique. This includes a TiO2 based wave-plate for an operating wavelength of 550 nm, a multilayer based beam splitter with a transmittance of 75.0% for TM light and 38.6% for TE light at 632 nm, and a multilayer based polarization neutral transmission filter for an incidence angle of 45°. Multilayer dielectric gratings (MDG) present another type of STF. To obtain a broad diffraction bandwidth, a novel MDG structure with three materials is proposed. Using multi-parameter optimization, a broadband spectrum with an efficiency >97.5% and a bandwidth >100 nm centered at 800 nm was obtained. For the first time, a new type of two-dimensional (2D) MDG is proposed to obtain higher efficiency (>98%) and broader bandwidth (>110 nm). Finally, the designs of pulse compression gratings and of broadband polarizers, which can be fabricated with a single material, are presented.

Magneto-optic properties of magnetic materials have much influence on the performance of these current sensors. For practical using, it is generally demanded that the sensing materials had the good magneto-optic properties of large Faraday rotation. Among the most attractive properties of the transparent materials containing Fe₂O₃ are those related to the magneto-optical effects. The Sol-gel processes are extensively used for the preparation of optical or magneto-optical nano-composite materials though the incorporation of metal ions in the silica matrix. In this study, the Nd₂O₃ doped Fe₂O₃-SiO₂ nano-composite films with different concentrations of Nd₂O₃, heated temperature and the number of layers were prepared by sol-gel method. The dependence of Faraday rotation angle of films is studied at room temperature. We find that appropriate concentrations of Nd₂O₃ (Nd/Si=0.011) doped has improved magneto-optic properties of higher Faraday rotation angle, the θ_F value increases with the decrease of the temperature below 500°C, the absolute value of Faraday rotation angle increases as the number of layers increases.

In this work, H-terminated (110) diamond film, a novel active material for high-frequency and high-power field-effect transistors (FETs), was successfully prepared by hot filament chemical vapor deposition (HFCVD) method using acetone as carbon source. X-ray diffraction (XRD) measurements showed that at a lower pressure of 2 KPa and a C/H ratio of 40/200, a higher intensity of (110) diffraction peak with a narrower full width at half maximum (FWHM) was detected which meant highly (110) preferential orientation of diamond films. H-terminated films were achieved by the hydrogen gas pressure of 5KPa and a microwave power of 2.4KW. The H-terminated (110) diamond films obtained were suitable for FETs. Hall Effect measurement indicated that the sheet carrier density of (110)-oriented films was 2.2x10¹³cm^-2, and 2.3 times higher than that of the randomly-oriented films.

Tungsten oxide thin films were prepared by depositing WO₃ onto glass substrates coated with ITO using reactive evaporation process at ambient temperature and 200°C respectively. The thin films were grown at different deposition rate. Chronoamperometry was carried out and spectral measurements were performed in situ. Results showed that the thin films prepared at low deposition rates possess higher coloration efficiency (CE), and the thin films grown at ambient temperature have high CE than those grown at 200°C. The origin of the differences in coloration efficiency of the thin films were analyzed and discussed based on the electrochromic mechanism of amorphous tungsten oxide films. The samples morphology was characterized by atom force microscopy (AFM).

UV and vacuum treatment, as well as annealing, were tried to recover the gas sensing property of WO3 films. Results show that gas sensing films can partially recover one or two coloring and bleaching cycles if kept in vacuum condition. And UV irradiation can well recover several cycles. But heat treatment does not show any obvious effect on the gas sensing recovery. Furthermore, IR and XPS spectra were used to identify the mechanism of this improvement. Results reveal that changes of water content will reduce the desorption energy of hydrogen atom, which will accelerate the bleaching velocity.

Mg/B₄C multilayer provides very high theoretical reflectivity in extreme ultraviolet range near 30.4nm wavelength, while the interface between Mg and B₄C layer is very poor. In this paper, Co was introduced into the interface between Mg and B₄C as a barrier layer. Mg/B₄C and Co/Mg/Co/B₄C multilayers were designed, fabricated, and measured for the wavelength of 30.4nm. The thickness of Co barrier layer was optimized. Grazing incidence x-ray reflectance measurements show that the structural quality of Co/Mg/Co/B₄C multilayer is improved significantly after Co barrier layer inserting, and the optimum thickness of the barrier layer is 1.5nm.

A thin PI film equal to or less than 200nm was fabricated on a Zr film to improve the mechanical characteristics of the latter. The PI film was prepared by two-step process. Througth fully reaction between Pyromellitic Dianhydride (PMDA) and Oxydianiline (ODA) in Dimethylacetamide (DMAC), polyamic acid (PAA) was produced. After the deposition of Zr film on floating glass using direct-current magnetron sputtering, PAA was prepared on the Zr film through dip-coating and then thermally imidized to form the PI film. The transmission spectrum obtained by using synchrotron radiation fits with calculation result fairly well. Although the combination of the PI film with Zr film results in the decline of the transmission, the mechanical strength of the composite film is improved, and the transmittances of the Zr(300nm)/PI(200nm) and Zr(400nm)/PI(200nm) films reach 14.9% and 7.5% respectively at 13.9 nm, still satisfying the actual requirement.

Mo doped ZnO thin films (ZnO:Mo, MZO) were prepared on quartz glass substrates by RF magnetron sputtering at the lower substrate temperatures (room temperature (RT) and 100°C). Their structural, electrical and optical properties were studied by X-ray diffractometry (XRD), four probe technique, Hall measurement, and UV-VIS-NIR spectrophotometer, respectively. XRD showed that the resultant films were wurtzite structure with c-axis preferential orientation. As the substrate temperatures increasing, the thickness of the film increased and the crystallinity became better. The resistivity of the films were 3.44x10^-3 Ω•cm and 3.31x10^-3 Ω•cm for the films deposited at RT and 100°C, respectively. The corresponding average transmittance in visible and near IR region (400-1100nm) was 81.7 % and 74.5 %, respectively. In addition, for the film deposited at 100°C, the refractive index (n) and band gap (Eg) were obtained by fitting the transmittance spectra and discussed.

Poly-HgI₂ films with an average small grain size of about 50μm were obtained on ITO substrates by ultrasonic wave-assisted vapor deposition method whose deposition temperature can be as low as 40 degree celsius. X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum characterization suggested that the film grew along the (001) crystal plane with uniform grain size. Dark current of the film and its response to X-ray had also been investigated with Au as pixel electrodes, the response uniformity on all 16 pixels is within 10%.

Fe₂O₃-SiO₂-CTAB transparent nano-composite films were prepared by means of a two-step acid-catalyzed method and sol-gel process using surfactant cetyltrimethylammonium bromide (CTAB) as template and tetraethoxysilane (TEOS) as the starting material, iron nitrate Fe(NO₃)₃·9H₂O as iron source material. Optical properties, structural and magnetic characteristics of the films were investigated by UV-visible spectra, FT-IR spectra and vibrating sample magnetometer (VSM). The transparency of the high temperature treated Fe₂O₃-SiO₂-CTAB nano-composite films exceeds the glass substrate. It is also found that the saturation magnetization (Ms) of the films increases with the treating temperature. The magnetization measurements reveal that Fe₂O₃-SiO₂-CTAB nano-composite films display normal ferromagnetic behaviors. It is also shown that the CTAB plays a key role in the optical and magnetic properties of Fe₂O₃-SiO₂-CTAB composite films.

The highly c-axis-oriented AlN buffer layers were successfully deposited on the nucleation sides of free-standing diamond (FD) films by direct current (DC) magnetron sputtering method. The influence of the sputtering parameters, such as the gas pressure and the sputtering plasma composition of Ar-to-N2, on the properties of AlN thin films were investigated. X-ray diffraction (XRD) measurements showed that when the gas pressure was 0.2 Pa and the plasma composition of Ar-to-N2 was 3:1, the higher intensity of the (002) diffraction peak and the narrower full width at half maximum (FWHM) were detected, which meant high c-axis orientation and high quality of AlN films. At last, a ZnO thin film was deposited on this buffer layer. The XRD and AFM results indicated that the sandwich structure can satisfy the application of surface acoustic wave (SAW) devices.

A diamond/SiO2/ indium-tin oxide (ITO) thin film multilayer structure of electroluminescent devices was reported. Effects of process parameters on morphologies and structures of the thin films were detected and analyzed by scanning electron microscopy, X-ray diffraction (XRD) spectrometer and X-ray photoelectron spectrometer (XPS). Finally a strong monochromatic red light emission was observed from this multilayer structure device, the electroluminescence spectrum at room temperature shows that the only illumination peak locates at 742nm, which is attributed to silicon atoms within the diamond film impurity center.

Due to different oriented polycrystalline HgI₂ films show different properties. In this paper the properties of different oriented HgI₂ films have been investigated by scanning electron microscopy, X-ray diffraction and current-voltage measurements. The measured results indicate HgI₂ films are of high quality and the properties of the (001)-oriented HgI₂ film are better than those of the free oriented ones. The dark current of the (001)-oriented HgI₂ film is 0.5 nA with an applied bias voltage of 40 V. The current of (001)-oriented HgI₂ film keeps unchanged during measurement.

Silicon nitride (SiNx) thin films were deposited by DC pulse reactive magnetron sputtering at ambient temperature. These films were characterized by spectroscopic ellipsometry(SE), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). It is found that among several regulable parameters, pulse frequency, target power density, reactive gas flow rate (or working pressure) could significantly influence the optical properties and compositions of SiNx thin film more than the reverse time. The rotation of substrate which used to improve the uniformity in the radial direction also can be utilized to alter the in-depth composition distribution of the films. SiNx film with high refractive index (~2.00) and ultra low extinction coefficient (<10^-3) were obtained on the optimal deposition conditions. It could be concluded that, compared to many disadvantages existing in various chemical vapour deposition (CVD) or radio frequency (RF) magnetron sputtering, DC pulse reactive magnetron sputtering is an alternative method to produce SiN_xfilms for the increasing application especially as the moisture barriers for flexible electronics and optoelectronics.

AlN has weak piezoelectric property (piezoelectric coefficient d₃₃=5.5pCN^-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize Sc_xAl_1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of Sc_xAl_1-xN.

Pure tungsten oxide thin films apparently show gasochromic performance, based on PdCl₂ catalyst. In this paper, adulteration of MoO₃ into WO₃ sol has been achieved via sol-gel method. FT-IR, Differential Scanning Calorimeter (DSC-TG) and Uv-visible Spectroscopy have been used to analysis the compound sols, films and optical properties for the use of this material as smart windows. FT-IR shows that for the compound, new characteristic absorption bands arise, which is different from pure WO3 or MoO₃. DSC-TG shows the phase change during the temperature ascending from 50 to 800°C. The compound thin films performs relatively well in coloring response time, colored extent, coloring-bleaching recycling and gasochromic effect with non-unicity color.

CsI:Tl scintillation films were prepared on the net-like patterning substrates. The pattern of the substrates as well as the morphology of the CsI:Tl films were measured by SEM. The results show that the size of each grid on substrate is 55μm which is formed by SU-8 photoresist with 5μm in both height and width, and the CsI:Tl films display quite a good columnar structure. The spatial resolutions of X-ray imaging were taken by MTF measurement. The spatial frequency of the CsI:Tl films on patterned substrates can reach up to 10 lp/mm at the 10% level of MTF, which is twice higher than that of the CsI:Tl film on the substrate without patterning.

The invention of the needle optimization technique and further modifications of this technique provided optical coating engineers with the most effective tools for designing of optical coatings of any type. An outstanding computational efficiency of modern design techniques has resulted in a new paradigm of designing of optical coatings.4 This new paradigm proposes to look for a practically optimal design instead of a formally optimal design characterized by the lowest possible merit function value. The concept of a practically optimal design is tightly connected with a monitoring approach used for optical coating production. At the modern state of art in production of innovative optical coatings, especially in production of high quality optical coatings for challenging applications, it is necessary to perform a combined choice of design and monitoring approach that should be applied for optical coating manufacturing. Modern design techniques can provide a great number of excellent theoretical designs and it is too expensive and time consuming to perform test manufacturing runs in order to choose the most practical design with the best expectation for a high manufacturing yield. An excellent alternative to real test manufacturing runs is provided by a series of experiments with computational manufacturing of optical coatings. Such experiments allow one to choose the best practical design and an appropriate monitoring approach at the lowest possible cost and in the most reasonable time frame. In this paper we outline the modern state of art in design, monitoring, and computational manufacturing of optical coatings.

Nuclear Magnetic Resonance (NMR) is a popular analysis technique in chemistry or biology but it is much less used in condensed matter physics and even less when the systems under investigation are ferromagnetic materials. However as a probe of the short-range chemical and topological order, NMR has proved useful to investigate the nanostructure of magnetic multilayers or granular systems and, in particular, to evaluate the nature, sharp or diffuse, of interfaces. In addition, NMR can probe selectively the magnetic properties of composite samples. Therefore NMR is a unique tool to investigate the correlation, at a local scale, between the nanostructure and the magnetic properties of a sample. For example, one can evidence the magnetic and structural in-homogeneities of the magnetic clusters and alloyed regions in nano-granular alloys. Some relevant results are presented, which have been obtained in the course of investigations of Co-based multilayers, ultrathin films and granular systems.

The performance of multilayer optics depends on the quality of the buried interfaces between materials, whose intermixing strongly affects their behavior. We present an experimental method to determine, in a non destructively way, the amount of material intermixing at interfaces of multilayer structures. The reflection mechanism is related to the build up in the multilayer of a standing wave field, whose peaks and the valleys move as a function both of wavelength and of incidence angle. Exploiting this fact it is possible to modulate the electric field inside the multilayer in order to have different parts of the multilayer structure excited at a different extent and in particular the buried interfaces regions. The excitation is directly proportional to the intensity of the electric field and to the concentration of a given element in the sample. The excitation can be detected with different techniques, f.i. electron core level photoemission, fluorescence, luminescence, total electron yield. The flexibility of the experimental apparatus of the BEAR beamline (Elettra Trieste, Italy) allowed us to study some important classes of layered structures in the soft X-ray energy range, using the above mentioned techniques together with the determination of the Bragg conditions through the measurement of the specular reflectivity. We demonstrate the possibility of obtaining quantitative information on the width of the intermixing region, strongly related to the interface roughness, through the comparison with a phenomenological model of the intermixing and a numerical simulation of the standing field inside the multilayer.

We describe some destructive and non-destructive techniques that can be useful to examine multilayers and particularly their interfaces. The presented non-destructive techniques allow obtaining the electron structure of the sample and then determine the chemical states of the elements in the multilayer from the analysis of the occupied (x-ray emission and photoemission spectroscopies) or unoccupied (x-ray absorption or electron energy loss spectroscopies) states. Among the destructive techniques we introduce secondary ion mass spectrometry and transmission electron microscopy that bring some information about the structural quality of the samples.

The field of single and multilayer based optics has seen significant improvements and new applications in recent years. In this paper, we give an overview of the numerous types of single and multilayer optics that have been developed. The fabrication possibilities of well-known regular periodic multilayers have been driven close to the theoretical limit, providing high resolution or high flux optics for a wide range of photon energies. In addition to that, multilayers with a lateral gradient have been developed to be adapted to curved substrates (for example for focusing purposes) or varying incidence angles on long, flat substrates. Depth-graded multilayers with arbitrarily selectable layer thicknesses over the entire layer stack have been simulated and manufactured, mainly as broadband mirrors with immense bandwidths. Finally, new applications of high precision deposition are reference sample for XRF (having several elements in low concentrations of few ng/mm²) and TXRF (with mass deposition in the range of 10¹¹ atoms/cm²) pay tribute to the low detection limits achievable in modern instruments for these techniques.

CdTe/Si substrates with etch-pit densities ~5 x 10⁴ - 2 x10⁵ cm^-2 and x-ray diffraction full-width at half-maximum <60 arcsec over >60% of a 3" substrate and ≤85 arcsec over the entire area are now available. Midwave and shortwave HgCdTe infrared detectors fabricated on these substrates have device characteristics as good as those of detectors fabricated on lattice-matched CdZnTe substrates. Also, minority carrier lifetimes of 100s of nanoseconds are measured for CdTe/Si and CdZnTe/Si, and both can be p-doped 10¹⁷ cm^-3 and n-doped >10²⁰ cm^-3. Calculations suggest that the use of these materials should yield multijunction solar cells with efficiencies higher than those of the corresponding III-V multijunction cells at much lower cost, using rugged, large-area, inexpensive active Si substrates. The first CdZnTe/Si single-junction solar cells fabricated by EPIR displayed an electronic-charge times open-circuit voltage, qV_oc, within ~0.45 eV of the CdZnTe bandgap E_g, as good a result as that for the best III-V alloy single-junction cells, and confirmed the suitability of single-crystal CdZnTe/Si for the manufacture of high-efficiency solar cells.

The design, fabrication and characterization of the dispersive multilayers are presented in this paper. Two kinds of dispersive mirror (High dispersion and 700-900nm Gires-Tournois mirrors) are designed by employing Particle Swarm Optimization method which demonstrates fast convergence speed and less dependence on the initial parameters. The mirrors are experimentally fabricated by home-made dual ion beam sputtering system with stable deposition rate and high density. A white light interferometry is built for precisely measuring the dispersion properties. A novel wavelet-based differentiation approach is introduced with considerable resistance to measurement error. The good agreement between the measured and designed results verifies the accuracy of both the fabrication and characterization method. Finally, two applications of Yb-doped photonic crystal fiber laser and Ti:Sapphire crystal oscillation cavity, which use our fabricated mirrors for dispersion compensation, are presented. Good output characteristics of both the two ultrafast laser systems are obtained.

We report a novel technique for microwave imaging utilizing a nonlinear coupling between the microwave fields in a ferromagnetic material, in which the relative phase of the coupled microwave fields plays an important role in the resultant homodyne dc voltage. A technical breakthrough has been achieved to effectively control such a relative phase using a spintronic Michelson interferometry. This enables a phase- and amplitude-resolved near-field dielectric image using a spintronic sensor. The contrast of microwave imaging for an object with subwavelength features strongly depends on the local dielectric constant of materials, and agrees well with simulation results by COMSOL.

We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO₂ masks on the front side surface.

The request of fluorescence microscopy filters was introduced. Optimized filter construction which requires more than 100 layers stack on both sides was redesigned. Surface deformation of filters caused by stress of multi-layers film was studied. The stress deformation effected by different film material and thickness was analyzed. A new flatten surface method was used to improve the surface flatness to 0.25λ. Filter sets were manufactured and photomicrograph was obtained with high contrast and no deformations when these filter sets were applied in fluorescence microscopy.

We have investigated the nanopore formation utilizing SiC/Si (001) heteroepitaxial growth. Inverse pyramidal pits were produced by {111} faceted on the top of Si layer of Silicon on Insulator (001) substrate after SiC growth by using CH₃SiH₃ pulse jet chemical vapor deposition. Randomly distributed nanopores with the size of ~10 nm were obtained after dipped into BHF solution for etching the buried oxide layer through the top of the pit. It was found that the densities of the pits and the nanopores strongly depend on the initial SiC nucleation density which can be controlled by the pulse frequency and number of CH₃SiH₃ pulse jets.

Epitaxial cerium oxide buffer layers were deposited on biaxially-textured (001) Ni tape using reel-to-reel pulsed laser deposition in a vacuum chamber. Relationship between microstructure and deposition parameters was systematically studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). We found the optimal deposition parameters for CeO₂ buffer layer which were quite suitable for preparing high-Jc YBCO films. The relationship between CeO₂ layer thickness and crack formation has also been discussed.

ZnO/diamond film heterojunction diodes were fabricated by depositing n-type ZnO films on p-type freestanding diamond (FSD) films using radio-frequency (RF) magnetron sputtering method. The effects of the annealing process on the properties of ZnO films were studied. The influence of the annealing process on the current-voltage (I-V) characteristics of the electrodes on ZnO and diamond films and the property of heterojunction diode was also examined. The results showed that the annealing treatment was helpful to improve the crystalline quality of the films and the performance of the diode.

Mercuric Iodide (HgI₂) is a promising semiconductor material for nuclear radiation detectors working at room temperature, especially for x-ray and γ-ray detectors. The influences of different growth temperatures on qualities of thin films were studied. The structure and optical properties of thin films were characterized by x-ray diffraction spectroscopy, metallography and UV-VIS spectrophotometer. Our results can be summarized as following: XRD analysis shows crystallinity of HgI₂ in thin films depends mainly on the growth temperatures, that is, the XRD reflections become stronger with the decrease of the growth temperature. The optimum growth temperature for preparation of polycrystalline HgI₂ thin film utilizing vertical deposition technique of chemistry is about 20°C. The corresponding thin film has a good uniformity with thickness of about 800 nm, perpendicular to the substrate along <001> direction. Based on its optical performance testing, our calculations found that HgI₂ thin film grown at 20°C has a wide energy band gap of about 2.26 eV.

Polycrystalline silicon (p-Si) is well-known as the high-efficency, low-cost, and most ideal material for manufacturing photovoltaic devices. In recent years, excimer-laser annealing (ELA), metal-induced crystallization (MIC) and solidphase crystallization (SPC) methods are employed to crystallize amorphous silicon (a-Si). In this paper, a cheap metal induced crystallization method of fabricating p-Si thin films on an ordinary glass substrate was investigated. In this synthesis process, a-Si thin film has been deposited onto glass substrates by Plasma Enhanced Chemical Vapor Deposition (PECVD), and p-Si thin films have been fabricated by aluminium-induced crystallization (AIC) under nitrogen ambient. The effects of annealing time, annealing temperature on the crystallization of a-Si were investigated by X-ray diffraction (XRD) technique. Our results indicate that annealing temperature over 300°C is necessary for crystallization of a-Si which preferred to orientation crystalline Si(111) and this preferred orientation becomes more obvious as increasing of annealing time and annealing temperature. Meanwhile, the longer annealing time can produce more a-Si crystallize completely under same aluminium thickness and annealing temperature.

We study the introduction of Zr as a third material within a nanometric periodic Mg/Co structure designed to work as optical component in the EUV range. Mg/Co, Mg/Zr/Co, Mg/Co/Zr and Mg/Zr/Co/Zr multilayers are designed, then characterized in terms of structural quality and optical performances through X-ray and EUV reflectometry measurements respectively. For the Mg/Co/Zr structure, the reflectance value is reported to be 50% at 25.1 nm and 45° of grazing incidence. Nuclear Magnetic Resonance (NMR) measurements are performed to study the nearest neighbour local environment around the Co atoms.

Freestanding diamond (FSD) film with p-type hydrogen-terminated nucleation surface was prepared by microwave plasma chemical vapour deposition (MPCVD) method. The post-treatment (wet chemical etch and annealing process) on the property of diamond film was investigated. The preparation and characterization of hydrogen-terminated diamond film p-type channel metal-semiconductor field effect transistors (MESFETs) was studied. The device was also used for photodetector application. The results showed the potential of high switching speed and high sensitivity to ultraviolet (UV).

YBCO films were grown on CeO₂/YSZ/CeO₂ buffered rolling-assisted biaxially textured substrates (RABiTS) by pulsed lased deposition (PLD). CeO₂ cap layer was deposited prior to YBCO growth. CeO₂ cap layers of different thickness were prepared to evaluate the thickness dependence of the YBCO films. The microstructure and surface morphology of the films were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is found that the thickness of the cap layer can remarkably affect the preparation of the subsequent YBCO layer. The possible mechanisms responsible for the dependence of the structure and the preparation of the YBCO films on the thickness of the CeO₂ cap layers are discussed.

Transmittance envelope of the thin film-substrate system and full spectra fitting method are two important methods to determine the optical constants of the optical thin films. Ion beam sputtering deposition technique was used to manufacture HfO₂ single layer thin film onto fused silica substrate. The two methods were used to calculate optical constants of the HfO₂ thin film in the extreme wavelength, and the Cauchy dispersion model was used to fit the optical constants in wavelength region from 300 nm to 1000 nm. Using the thin-film optical constants obtained above we calculated the spectral transmittance and judged the inversion accuracy of the two methods. The results show that the accuracy of the full spectra fitting method is higher than the transmittance spectra envelope. The similarities and differences between the two methods are also discussed in this paper.

Integral scattering is one of the important loss components of high-reflection optical thin films, so suppressing integral scattering can enhance the reflectance of high-reflection coating. Using integrating sphere is the important method of the integral scattering measurement of high reflection coatings. The paper introduced the measurement method and apparatus of integral scattering for single-wavelength at incident angle of 45deg by analyzing the principle of integrating sphere. Besides the important error sources and measurement accuracy of the integral scattering were analyzed. High-reflection coating for single wavelength onto fused silica substrate at incident angle of 45deg was manufactured by ion beam sputtering deposition and integral scattering apparatus was used to measure integral scattering of high-reflection coating. Finally by comparison of the experimental result and the value of scattering theory, we achieved the practical measurement errors origin that and established the foundation of scattering loss analysis for the ultra low losses high-reflection coating.

Erbium silicide nanostructures were self assembled on the Si(001) substrates by novel multiple deposition and annealing steps. In-situ scanning probe microscopy (SPM) and ex-situ scanning electron microscopy (SEM) were used to characterize the morphology of the nanostructures. Compared with traditional growth method, it was found that ErSi₂ nanostructures fabricated by cyclic growth could keep stable morphology avoiding the shape instability. Besides, both the size and distribution density could be well controlled, which have significance in the application of nanostructures.

Aluminum mirrors were freshly fabricated under optimum conditions protected with MgF₂ at various deposition rates which evaporated by e-beam. All the samples were deposited on fine polished fused silica substrate. The reflectance results were measured by Mcpherson Vuvas2000 spectrometer in DUV/VUV spectral region from 150nm to 350nm. The highest reflectance is chosen to 210nm, and the point of 160nm is also very important for the project, so the results of two points are detailed presented. The highest average reflectance is about 86.76% with the MgF₂ deposition rate at 1.2nm/s. The effects of aging on the reflectance of the MgF₂ protected aluminum mirrors are discussed.

CdS is deposited on transparent conductive oxide (TCO)-coated glass substrate by radio frequency (r.f.) magnetron sputtering method. The X-ray diffraction (XRD) measurements revealed that CdS films were polycrystalline with the hexagonal wurtzite structure present only. The same conclusions as described below are arrived at from the photoluminescence (PL) and UV-vis absorption spectra measurements. When the power increases or the gas pressure decreases, the grain size and the film thickness increases, and then lead to the increase of stress in films which results in the decrease of energy band gap. The substrate temperature also has an effect on the strain in the films.

In the heterojunction system, SnS was used as the absorption layer of solar cells. In this work, Cd-free ZnS material was selected as the window layer. SnS and ZnS were prepared by vacuum evaporation. Annealing plays a considerable role in the process which will affect the crystal structure and composition of the film. In this experiment, the films were annealed at temperature 300°C, 400°C and 500°C in N2 atmosphere. In XRD diagram, two strong diffraction peaks at 29.2° and 32.2° were observed, corresponding to β-ZnS (111) and SnS (111), respectively. SEM images show that average grain size of the film is about 50 nm. Noticeable increase of grain size and clear boundaries between grains were found after annealing. The electrical properties of the SnS thin films were changed through varying annealing processes. All the results indicate that ZnS/SnS structure is a good choice of SnS solar cells.

The Si overlayers were grown by solid phase epitaxy on the atomically smooth Er₂O₃ (111) films, which is prepared on the Si (111) substrate in optimum conditions. The twin structure was observed in the spot-like reflective high energy electron diffraction (RHEED) patterns. The rough surface of Si overlayer, as identified by both RHEED results and Atomic force microscopy (AFM) images, indicated a three dimensional growth mode in contrast to the two dimensional growth mode of Er₂O₃ on the Si (111) substrate. The physical origin of three dimensional grow is given based on the interfacial energy argument.

White organic light-emitting diode was realized by co-doping a blue dye p-di(p-N,N-diphenyl-amino-styryl)benzene(DSA-ph) and a red dye 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran(DCJTB) into a blue host 2-(t-butyl)-9,10-di(2-naphthyl)anthracene(TBADN), achieving a brightness of 11580 cd/m² at 200 mA/cm², and a maximum current efficiency of 7.53 cd/A. The improvement was due to efficiency energy transfer from host to guest by the aid of assistant energy transfer mechanism. The device introduced a (4,4'-N,N'-dicarbazole)biphenyl/4,4'-bis(N-carbazolyl)biphenyl(CBP) interlayer between separate double emissive layers with the same materials showed improved color stability, due to the blocking effect of the CBP layer, which contributed to stable and even exciton distribution in both blue and red emission layer.

A series of InSb films with different thickness were grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The InSb films were characterized by the high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Hall measurement. The measurements revealed that the films have good crystal quality and electrical properties. It was found that the crystal quality and the electrical properties degenerate with decrease of film thickness. And the room temperature magnetoresistance of the InSb films was also measured and discussed in detail.

This paper describes a novel remote plasma sputtering technique for depositing optical thin films. This technology is based on generating intensive plasma remotely from the target and then magnetically steering the plasma to the target to realize the sputter deposition. It overcomes several of inherent limitations in conventional sputtering techniques and realizes the fully uniform erosion over the surface of the target and less target poison. This allows a uniform reaction in the plasma phase when performing reactive sputtering, leading to the formation and deposition of material with a uniform stoichiometry and gives pseudo-independence of target current and voltage. This pseudo-independence offers a great deal of flexibility with regard to the control of growth conditions and film properties, the benefits include control of stress, very low deposition rates for ultra thin films. By remote reactive sputtering, dense metal-oxide optical thin films (SiO₂, Ta₂O₅, Nb₂O₅) with a high deposition rate, excellent optical properties are achieved. High process stability shows an excellent time terminating accuracy for multilayer coating thickness control. Typically, thin film thickness control to <±1% is accomplished simply using time. The multilayer coating, including anti-reflection, dichroic mirror and 2μm laser mirrors are presented.

Among scintillators, columnar CsI screens are used in applications detecting charged particles, UV light or X-ray for high energy physics and medical radiography. CsI scintillator can be grown in special microcolumnar form that preserves spatial resolution in thick coatings. We report on the columnar CsI films fabricated directly on optical-fiber plate by traditional vacuum deposition method. There morphology and structure were examined by scanning electron microscopy and X-ray diffraction. Properties of films depend on deposit condition are discussed.

CTAB-templated large pore silica nano-composite films were prepared by means of a two-step acid-catalyzed and solgel process using tetraethoxysilane (TEOS) as the precursor, Surfactant cetyltrimethy- ammonium bromide (CTAB) as an organic template to generate the uniformity pore structure and 1,3,5-trimethyl benzene (TMB) as organic swelling agent. The obtained samples were characterized by XRD, Fourier-transform infrared (FTIR) and Atomic Force Microscopy (AFM). We found that the TMB/CTAB mol ratio must be controlled well for producing large pore materials.

A new way to modify the surface of mesoporous silica film to be hydrophobic is introduced in this paper. A surface modification agent Hexamethyldisilazane (HMDS) was applied to yield hydrophobic groups on the surface of porous silica films before and after template removal to prevent the absorption of moisture. Compared to the normal hydrophobic treatment, the hydrophobic properties of the mesoporous silica films were enhanced greatly after the two-step treatments.

A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects .This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH₄ and Si with Kaufman ion source by IARE at 300°C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense, homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm, the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective.

In this paper, silica thin films with different CdS quantum dot concentrations are deposited on glass substrates by a sol-gel dip-coating process, followed by thermal treatment at different annealing temperatures. The effects of CdS concentration and annealing temperature on the structural and optical properties of the composite films are investigated through X-ray diffraction, UV-Vis spectroscopy and photoluminescence spectra. Results show that the CdS crystallites with diameter of several nanometers in silica matrix are in cubic phase and shows preferred orientation of (200). The Stokes shift of about 0.3eV between its absorption peak and emission peak makes the CdS composite film be possible as an efficient light shifter to solar cells.

In this paper the displacement of the reflection resonant peak resulting from the change of the gap between the guided-mode resonance (GMR) grating and substrate is used to measure the nanometer gap. The paper calculates double layer model and metal substrate model using rigorous coupled-wave analysis (RCWA). It is revealed that nano-gap detection using GMR grating is feasible for both dielectric and metal substrate. The detection range of resonant wavelength and gap is tunable. The detect sensitivity is investigated by varying the parameters of grating (thickness, period and refractive index), the thickness of films, and polarization. Tolerance of grating implies an advantage for manufacture. An optimized result presents an 18nm resonant shift for 100nm gap with the max sensitivity achieving 0.85.

There is a growing requirement to use supersmooth surfaces with roughness in the sub-nanometer range. But, to produce 100mm-diameter optical elements with ultra-flat and supersmooth surfaces is still difficult. The fabrication technique based on continues polishing process is presented to produce flat optical element with extremely smooth surface. During the fabrication, A concept of "Process Controlling" is introduced, which means the machining of super-smooth surfaces is considered as a chain consisted of some key nodes, not merely a polishing process. The surface figure is tested using interferometer and the surface roughness is using interference microscopy and atom force microscopy (AFM) repectively. Then the Power Spectral Density (PSD) function, including the basic theory and the physical meaning, are presented to explain the difference of test results, which is measured by optical profiler and AFM with different parameters. The polynomial fitting results indicate that there is excellent agreement between measurements made by the two instruments.

The absorptance and high reflectance measurements of laser optics are presented. In the absorptance measurement, the laser calorimetry (LC) technique is investigated. A rigorous theoretical model describing the laser irradiation induced temperature rise in a coated sample, in which both the finite thermal conductivity and the finite size of sample are taken into account, is developed to optimize the temperature detection geometry to further improve the accuracy of the absorptance measurement. For the high reflectivity measurement, an optical feedback cavity ring-down (OF-CRD) technique, in which a continuous-wave (CW) Fabry-Perot (FP) diode laser is used as the light source, is employed for high reflectivity measurement. The linear and V-shaped schemes are investigated to measure the reflectivity of cavity mirrors and planar test mirrors, respectively. For cavity mirrors with reflectance larger than 99.99%, the measurement error is less than 1ppm.

In this paper, we present a brief history of EUV multilayer mirrors and recent results achieved at Institut d'Optique in the fields of space science and ultra-fast pulses. Concerning space science, we present two solutions to improve reflectivity of EUV multilayer for solar imaging: three material multilayers and Al-based multilayers. Concerning attosecond pulses, we demonstrate the possibility to realize multilayer mirrors for an efficient transport of high harmonics on a broad energy band with high efficiency.

For extreme ultraviolet (EUV) radiation and soft X-rays, real part of the refractive indices of all materials are very close to unity, coupled with high absorption, makes the realization of high-reflective mirrors (just like visible and infrared light) impossible. Multilayer is a nano-structure, alternating of low- and high-Z materials in a periodic way, which can greatly enhance the reflectivity via the interference of light reflected from interfaces, like crystal optics. Reflective mirrors, polarization elements, monochromators, etc, can be made basing on multi-layer structures. Zone plate is a powerful tool to focus the light beam for EUV and soft X-ray into nanometer scale, which is produced by electron beam etching method. However, for hard X-ray, the zone plate will has smaller width of outmost layer and larger aspect ratio, which is difficult to realize. Multilayer Laue lens (MLL) is a promising method to overcome these limitations. MLL is a novel linear zone plate which is produced by depositing the depth-graded multilayer, according to the zone plate law reversely, on flat substrate and then slicing and polishing it to an ideal aspect ratio. In this paper, some recent development of multilayer optics for EUV and X-ray regions in IPOE will be introduced.

The strong absorption of materials in the extreme ultraviolet (EUV) above ~50 nm has precluded the development of efficient coatings. The development of novel coatings with improved EUV performance is presented. An extensive research was performed on the search and characterization of new materials with low absorption or high reflectance. Lanthanide series was found to be a source of materials with relatively low absorption in this range, where most materials in nature present a strong absorption. Other materials, such as SiO and B, have been found to have interesting properties for applications on EUV coatings. As a result, novel multilayers based on Yb, Al, and SiO have been developed with narrowband performance in the 50-92 nm range. In some cases, the difficulty of developing narrowband coatings in the EUV can be overcome by designing multilayers that address specific purposes, such as maximizing and/or minimizing the reflectance at two or more wavelengths or bands. In this direction, we are working towards the development of coatings that combine a relatively high reflectance in a desired EUV band with a low reflectance in another band, for applications in which the presence of the latter radiation may mask a weak EUV radiation source.

We present a summary of our work towards developing spectroscopic and nuclear imaging detectors using epitaxially grown thick single crystal CdTe layers on Si substrates. High crystalline quality thick single crystal CdTe layers (>260 μm) were obtained where the growth rates could be varied from 10-70 μm/h by adjusting the precursor's flow rates, ratios and the substrate temperatures. Both high resistivity p-like CdTe layers and highly conductive n⁺-CdTe layers with controlled electrical properties were obtained using iodine as a dopant, but using different growth conditions. Detectors were fabricated in a p-CdTe/n⁺-CdTe/n⁺-Si heterojunction diode structure, which demonstrated their energy discrimination capability by resolving energy peaks from a gamma source. Details on the growth characteristics and the fabrication process for a 2-D imaging array are presented.

Silica-based sol-gel antireflective (AR) optical coatings are critical components for high peak power laser systems. It is well known that water vapor and volatile organic compounds in both the laser bay and target bay environments will reduce the antireflective efficiency and laser-damage resistance of the sol-gel AR coating. In this study, alkylation with organosilanes in the vapor state was investigated. Sol-gel AR coatings were vapor-phase treated with hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) at room temperature, and the resulting post-treated sol-gel AR coatings were tested for their resistance to contamination by a series of volatile organic compounds. Contact angle measurements were taken to discern the degree of silanization. After the vapor treatment of sol-gel AR coatings with organosilanes, the spectral performance of the coatings were analyzed by spectrophotometer, both before and after the exposure to volatile organic compounds. It is found that the coatings treated with ammonia and HMDS show a better contamination resistant capability. After being contaminated 70 hours with hexane, the transmittance of the coatings presents no obvious decrease. And the vapor treatment produces an increase in their damage threshold at 1064 nm (10ns pulse width) as compared to untreated control samples.

In this invited paper, we report the effect of different annealing environments on the changeable radiative recombination characteristics of Si quantum dots (QDs), which not only provides ways to identify the photoluminescence mechanism, but also realizes the possibility to control the origin of the luminescence. We also focus on the application of Si QDs in the third-generation solar cells, with the emphasis on growth of well-ordered Si QDs, on photoresponse control of Si QDs, and on approaches to reduce the lattice thermalization loss in Si QDs solar cells.

We are developing a hard X-ray telescope utilizing multilayer supermirrors. This telescope is conical approximation of the Wolter-I configuration with tightly nested shells. Because of the fact that different nested shell corresponds to different grazing incident angle, so the optimum multilayer design depends on the grazing angle, and one would therefore, ideally design a different coating for each of the nested mirror shells. However, as a matter of practicality, we have to reduce the number of different designs for a reasonable compromise between the complexity of the calculation and optimal performance. In this paper, we investigate the effect of different angular classification on the effective area of the hard X-ray telescope. Many groups of hard X-ray supermirrors are optimized with different grazing incident angles using a numerical and analysis method. These supermirrors are divided into different number of groups, e.g. two, four, six, eight, ten, twelve, fourteen, and sixteen, respectively, and the corresponding effective areas are calculated. Results show that six groups of X-ray supermirrors are suitable for a reasonable compromise between optimal performance and the complexity of the calculation and fabrication.

This paper presents a planarization procedure using polymer films to achieve a flat CMOS surface of Readout Integrated Circuit (ROIC) for the integration between uncooled infrared focal plane arrays and ROIC. At the same time, the polymer film is also used as the sacrificial layers. After amorphous Silicon (a-Si) film was deposited using plasma enhanced chemical vapor deposition (PECVD), and patterned using inductively coupled plasma (ICP), the polymer sacrificial layer should be removed to form a-Si self-supporting micro-bridge structure. So the thickness of polymer film determine the height of the micro-bridge; the soft curing temperature determines if the contact hole can be etched by developer during the first photolithography; and the rate of dry etching determines whether the sacrificial layers of the structure can be released successfully. In this paper, the curing temperature, surface roughness, etching process of polymer films are systematically researched. On this basis, polymer film as planarization successfully reduces the 2μm height of the bumps on ROIC to less than 83 nm, over the planarized polymer mesas, bolometer arrays are fabricated. Then the polymer film as sacrificial are removed by ICP and 160x120 self-supporting micro-bridge structure arrays are successfully fabricated.

Impurity diffusion from the flexible metal substrate into CIGS absorption layer can remarkably reduce cell performance comparing with conventional glass substrate. A diffusion barrier layer lying between the metal substrate and Mo backcontact layer is required to prevent this spread of impurities. In this paper, a set of Si_3+xN_4-x barrier layers are grown on stainless steel sheets and alloy foils by the magnetron sputtering under different conditions. The morphological, structural and electrical properties of the samples are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and I-V measurements. Our results indirectly support good blocking effect of Si_3+xN_4-x barrier to the metal impurities from the stainless steel substrate.

ZnMgO films were prepared at room temperature on freestanding diamond (FSD) substrates by co-sputtering with different sputtering power of MgO target. The effect of sputtering power of MgO target on the property of ZnMgO films was investigated. The PL spetra of ZnMgO films revealed that the bandgap of ZnMgO was approximately linear related to the sputtering power of MgO target. The ZnMgO film was also applied to be fabricating UV detectors. Finally, we studied the photoelectric property of the UV detector.