Paper
17 February 2011 Air-annealing effects on SiO2/ITO coating
Yiqin Ji, Deying Chen, Weihao Li, Bingjun Wu, Jie Zong, Dandan Liu, Yanmin Zhang
Author Affiliations +
Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 799502 (2011) https://doi.org/10.1117/12.888408
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
Indium tin oxide (ITO) thin film with SiO2 protective upper layer prepared by electron beam evaporation was annealed in air up to 300°C. Evolution of transmittance, resistance and surface morphology of this SiO2/ITO coating was studied. Transmittance in visible and near-infrared range both increased while absorption edge exhibited red shift after annealing. Resistance increased monotonously with rising annealing temperature, yet increments became smaller at temperatures above 270°C. Micron-defects were observed on the surface of SiO2/ITO coating after annealing. Enhancement of crystallinity of ITO layer at high temperatures was thought to be responsible for these morphology and resistance evolutions.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yiqin Ji, Deying Chen, Weihao Li, Bingjun Wu, Jie Zong, Dandan Liu, and Yanmin Zhang "Air-annealing effects on SiO2/ITO coating", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799502 (17 February 2011); https://doi.org/10.1117/12.888408
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KEYWORDS
Resistance

Annealing

Transmittance

Coating

Crystals

Absorption

Electron beams

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