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18 February 2011 Effects of annealing on the structural properties of Cu(In,Ga)Se2 thin films prepared by RF sputtering
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79950A (2011) https://doi.org/10.1117/12.888168
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
Cu(In,Ga)Se2 (CIGS) thin films have been prepared by radio frequency (RF) magnetron sputtering from a CuIn0.8Ga0.2Se2 target. The effects of in-situ annealing in Ar atmosphere on phase structure, composition and surface morphology of the films have been investigated by X-ray diffraction (XRD), energy dispersive analysis of X-rays (EDAX), atomic force microscopy (AFM) and Raman spectroscopy. XRD patterns show that both as-deposited and annealed films have a chalcopyrite structure with strong (112) preferred orientation. The annealed films display a higher degree of crystallinity and smoother surface, while there is little difference in grain size for films annealed at temperatures ranging from 300°C to 500°C. Results of EDAX reveal that the films are near to stoichiometry. Raman spectrum of the films annealed at 300°C shows only the CIGS A1 mode peak indicating the formation of single-phase chalcopyrite with enhanced crystalline ordering. The films annealed at higher temperatures exhibit a non-chalcopyrite mode at around 260 cm-1 assigned to Cu2-xSe secondary phase which is detrimental to CIGS solar cells.
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Gang Shi and Junhao Chu "Effects of annealing on the structural properties of Cu(In,Ga)Se2 thin films prepared by RF sputtering", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950A (18 February 2011); https://doi.org/10.1117/12.888168
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