18 February 2011 Contact resistance in organic transistors with different structures
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79950D (2011) https://doi.org/10.1117/12.888227
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
It is an important way to improve carrier mobility by reducing the contact resistance in organic transistors. In this paper, two kinds of transistors were fabricated with copper phthalocyanine semiconductor. Then by experimental methods, we tested the devices with different structure and different channel length, and analyzed the effect of structure on contact resistance as well as output characteristic. The results demonstrate that gate voltage can effectively reduce the contact resistance in the top contact device.
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Jiaxing Hu, Jiaxing Hu, Lianbin Niu, Lianbin Niu, Rongli Guo, Rongli Guo, Baoyuan Liu, Baoyuan Liu, } "Contact resistance in organic transistors with different structures", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950D (18 February 2011); doi: 10.1117/12.888227; https://doi.org/10.1117/12.888227
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