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18 February 2011 The influence of micron-sized nodules on the electric-field districution in thin-film polarizers
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79950Q (2011) https://doi.org/10.1117/12.887565
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
The influence of micron-sized nodules on the electric-field enhancement in the HfO2/SiO2 thin-film polarizers with non-quarter- wave layers at 1053nm and 56° is studied using the finite-difference time-domain electromagnetic modeling. The theoretical results show that the electric-field enhancements in HfO2 material are greater at s polarization than those at ppolarization. Nodular defect originating from the large, shallow seed leads to the highest electric-field enhancement while that containing the small, deep seed leads to the lowest electric-field enhancement. The TFP coating designed with the electric-field peaks located in the SiO2 layers has no obvious advantage in decreasing the laser-induced damage than that designed with the electric-field peaks located in the HfO2 layers, once they have the similar nodular defects in them.
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Naibo Chen, Yonggang Wu, Zhenhua Wang, Leijie Ling, Zihuan Xia, Heyun Wu, and Gang Lv "The influence of micron-sized nodules on the electric-field districution in thin-film polarizers", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950Q (18 February 2011); https://doi.org/10.1117/12.887565
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