Translator Disclaimer
18 February 2011 Structure and luminescence properties of Tb3+-doped Lu3Al5O12 films prepared by Pechini sol-gel method
Author Affiliations +
Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79950Y (2011) https://doi.org/10.1117/12.888433
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
Tb3+-doped Lu3Al5O12(hereinafter referred to as LuAG:Tb) films were successfully prepared by Pechini sol-gel process and spin-coating technique on carefully cleaned (111) silicon wafer. The microstructure and optical properties of the LuAG:Tb films were studied by X-ray diffraction (XRD), atomic force microscopy(AFM), as well as photoluminescence (PL) spectra. The XRD results showed that the precursor films started to crystallize at about 900°C. All as-calcined LuAG:Tb films showed the Tb3+ characteristic emission bands.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian Wang, Siqing Shen, Jianjun Xie, Ying Shi, and Fei Ai "Structure and luminescence properties of Tb3+-doped Lu3Al5O12 films prepared by Pechini sol-gel method", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950Y (18 February 2011); https://doi.org/10.1117/12.888433
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top