18 February 2011 Electroluminescence from Si nanocrystals by annealing amorphous silicon carbide films
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 799514 (2011) https://doi.org/10.1117/12.888225
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
In this work, a-SiC:H films have been fabricated in plasma enhanced chemical vapor deposition system by controlling the gas flux ratio R of methane to silane and subsequently annealed in N2 atmosphere for 1 h at the temperature of 1000°C. Raman spectra showed the formation of Si nanocrystals embedded in amorphous SiC matrix after annealing. Room temperature visible electroluminescence was achieved due to the recombination of electron-hole pairs in Si nanocrystals for the annealed samples. The current-voltage relationships were also investigated and the tunneling mechanism was discussed based on the carrier transport properties.
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Yunjun Rui, Yunjun Rui, Shuxin Li, Shuxin Li, Chao Song, Chao Song, Hongcheng Sun, Hongcheng Sun, Tao Lin, Tao Lin, Yu Liu, Yu Liu, Jun Xu, Jun Xu, Wei Li, Wei Li, Kunji Chen, Kunji Chen, } "Electroluminescence from Si nanocrystals by annealing amorphous silicon carbide films", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799514 (18 February 2011); doi: 10.1117/12.888225; https://doi.org/10.1117/12.888225
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