18 February 2011 Oriented SnS thin films formed by nano-multilayer method
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 799515 (2011) https://doi.org/10.1117/12.888219
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed by thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The films showed strong (040) crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity of 5 Ω•cm.
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Zhan Xu, Zhan Xu, Yigang Chen, Yigang Chen, Weimin Shi, Weimin Shi, Linjun Wang, Linjun Wang, } "Oriented SnS thin films formed by nano-multilayer method", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799515 (18 February 2011); doi: 10.1117/12.888219; https://doi.org/10.1117/12.888219
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