18 February 2011 Preparation and characterization of (110) diamond films used for field-effect transistors
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79951B (2011) https://doi.org/10.1117/12.888210
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
In this work, H-terminated (110) diamond film, a novel active material for high-frequency and high-power field-effect transistors (FETs), was successfully prepared by hot filament chemical vapor deposition (HFCVD) method using acetone as carbon source. X-ray diffraction (XRD) measurements showed that at a lower pressure of 2 KPa and a C/H ratio of 40/200, a higher intensity of (110) diffraction peak with a narrower full width at half maximum (FWHM) was detected which meant highly (110) preferential orientation of diamond films. H-terminated films were achieved by the hydrogen gas pressure of 5KPa and a microwave power of 2.4KW. The H-terminated (110) diamond films obtained were suitable for FETs. Hall Effect measurement indicated that the sheet carrier density of (110)-oriented films was 2.2x1013cm-2, and 2.3 times higher than that of the randomly-oriented films.
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Fengjuan Zhang, Fengjuan Zhang, Qinkai Zeng, Qinkai Zeng, Xiaoyu Pan, Xiaoyu Pan, Mei Bi, Mei Bi, Xingmao Yan, Xingmao Yan, Jian Huang, Jian Huang, Ke Tang, Ke Tang, Jijun Zhang, Jijun Zhang, Linjun Wang, Linjun Wang, } "Preparation and characterization of (110) diamond films used for field-effect transistors", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951B (18 February 2011); doi: 10.1117/12.888210; https://doi.org/10.1117/12.888210
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