18 February 2011 Preparation and characterization of tungsten oxide thin films with high electrochromic performance
Author Affiliations +
Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79951C (2011) https://doi.org/10.1117/12.887560
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
Tungsten oxide thin films were prepared by depositing WO3 onto glass substrates coated with ITO using reactive evaporation process at ambient temperature and 200°C respectively. The thin films were grown at different deposition rate. Chronoamperometry was carried out and spectral measurements were performed in situ. Results showed that the thin films prepared at low deposition rates possess higher coloration efficiency (CE), and the thin films grown at ambient temperature have high CE than those grown at 200°C. The origin of the differences in coloration efficiency of the thin films were analyzed and discussed based on the electrochromic mechanism of amorphous tungsten oxide films. The samples morphology was characterized by atom force microscopy (AFM).
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gang Lv, Yonggang Wu, Heyun Wu, Leijie Ling, Zihuan Xia, "Preparation and characterization of tungsten oxide thin films with high electrochromic performance", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951C (18 February 2011); doi: 10.1117/12.887560; https://doi.org/10.1117/12.887560
PROCEEDINGS
4 PAGES


SHARE
RELATED CONTENT


Back to Top