18 February 2011 Preparation and characterization of free-standing Zr, PI and Zr/PI filter
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79951F (2011) https://doi.org/10.1117/12.887562
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
A thin PI film equal to or less than 200nm was fabricated on a Zr film to improve the mechanical characteristics of the latter. The PI film was prepared by two-step process. Througth fully reaction between Pyromellitic Dianhydride (PMDA) and Oxydianiline (ODA) in Dimethylacetamide (DMAC), polyamic acid (PAA) was produced. After the deposition of Zr film on floating glass using direct-current magnetron sputtering, PAA was prepared on the Zr film through dip-coating and then thermally imidized to form the PI film. The transmission spectrum obtained by using synchrotron radiation fits with calculation result fairly well. Although the combination of the PI film with Zr film results in the decline of the transmission, the mechanical strength of the composite film is improved, and the transmittances of the Zr(300nm)/PI(200nm) and Zr(400nm)/PI(200nm) films reach 14.9% and 7.5% respectively at 13.9 nm, still satisfying the actual requirement.
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Heyun Wu, Yonggang Wu, Gang Lv, Zhenhua Wang, Leijie Ling, Zihuan Xia, Naibo Chen, "Preparation and characterization of free-standing Zr, PI and Zr/PI filter", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951F (18 February 2011); doi: 10.1117/12.887562; https://doi.org/10.1117/12.887562
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