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18 February 2011 High uniformity HgI2 thick film prepared by ultrasonic wave-assisted physical vapor deposition
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79951H (2011) https://doi.org/10.1117/12.888221
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
Poly-HgI2 films with an average small grain size of about 50μm were obtained on ITO substrates by ultrasonic wave-assisted vapor deposition method whose deposition temperature can be as low as 40 degree celsius. X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum characterization suggested that the film grew along the (001) crystal plane with uniform grain size. Dark current of the film and its response to X-ray had also been investigated with Au as pixel electrodes, the response uniformity on all 16 pixels is within 10%.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Nie, Weimin Shi, Weigang Yang, Lei Ma, Liangliang Chen, and Guangpu Wei "High uniformity HgI2 thick film prepared by ultrasonic wave-assisted physical vapor deposition", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951H (18 February 2011); https://doi.org/10.1117/12.888221
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