18 February 2011 Study of high temperature piezoelectric scandium aluminum nitride thin films
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79951N (2011); doi: 10.1117/12.888228
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.
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Xiaolei Shi, Yigang Chen, Weimin Shi, Linjun Wang, "Study of high temperature piezoelectric scandium aluminum nitride thin films", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951N (18 February 2011); doi: 10.1117/12.888228; https://doi.org/10.1117/12.888228
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KEYWORDS
Aluminum nitride

Thin films

Sputter deposition

Scandium

Aluminum

Chemical species

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