18 February 2011 Study of high temperature piezoelectric scandium aluminum nitride thin films
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79951N (2011) https://doi.org/10.1117/12.888228
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.
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Xiaolei Shi, Xiaolei Shi, Yigang Chen, Yigang Chen, Weimin Shi, Weimin Shi, Linjun Wang, Linjun Wang, } "Study of high temperature piezoelectric scandium aluminum nitride thin films", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951N (18 February 2011); doi: 10.1117/12.888228; https://doi.org/10.1117/12.888228
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