18 February 2011 Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 799520 (2011) https://doi.org/10.1117/12.888388
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
We have investigated the nanopore formation utilizing SiC/Si (001) heteroepitaxial growth. Inverse pyramidal pits were produced by {111} faceted on the top of Si layer of Silicon on Insulator (001) substrate after SiC growth by using CH3SiH3 pulse jet chemical vapor deposition. Randomly distributed nanopores with the size of ~10 nm were obtained after dipped into BHF solution for etching the buried oxide layer through the top of the pit. It was found that the densities of the pits and the nanopores strongly depend on the initial SiC nucleation density which can be controlled by the pulse frequency and number of CH3SiH3 pulse jets.
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Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka, "Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799520 (18 February 2011); doi: 10.1117/12.888388; https://doi.org/10.1117/12.888388
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