18 February 2011 The annealing effects on the ZnO/diamond film heterojunction diode
Author Affiliations +
Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 799522 (2011) https://doi.org/10.1117/12.888200
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
ZnO/diamond film heterojunction diodes were fabricated by depositing n-type ZnO films on p-type freestanding diamond (FSD) films using radio-frequency (RF) magnetron sputtering method. The effects of the annealing process on the properties of ZnO films were studied. The influence of the annealing process on the current-voltage (I-V) characteristics of the electrodes on ZnO and diamond films and the property of heterojunction diode was also examined. The results showed that the annealing treatment was helpful to improve the crystalline quality of the films and the performance of the diode.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian Huang, Linjun Wang, Ke Tang, Jijun Zhang, Weimin Shi, Yiben Xia, Xionggang Lu, "The annealing effects on the ZnO/diamond film heterojunction diode", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799522 (18 February 2011); doi: 10.1117/12.888200; https://doi.org/10.1117/12.888200
PROCEEDINGS
4 PAGES


SHARE
Back to Top