Translator Disclaimer
18 February 2011 Preparation of an optically activated field effect transistor based on diamond film
Author Affiliations +
Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 799526 (2011) https://doi.org/10.1117/12.888360
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
Freestanding diamond (FSD) film with p-type hydrogen-terminated nucleation surface was prepared by microwave plasma chemical vapour deposition (MPCVD) method. The post-treatment (wet chemical etch and annealing process) on the property of diamond film was investigated. The preparation and characterization of hydrogen-terminated diamond film p-type channel metal-semiconductor field effect transistors (MESFETs) was studied. The device was also used for photodetector application. The results showed the potential of high switching speed and high sensitivity to ultraviolet (UV).
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lingyun Shi, Ke Tang, Jian Huang, Qinkai Zeng, and Linjun Wang "Preparation of an optically activated field effect transistor based on diamond film", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799526 (18 February 2011); https://doi.org/10.1117/12.888360
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top