The growth of Si overlayers on Er2O3(111)/Si(111) by solid phase epitaxy

Run Xu; Jiaming Xie; Minyan Tang; Yanyan Zhu; Lin-jun Wang

doi:10.1117/12.888362

18 February 2011 The growth of Si overlayers on Er₂O₃(111)/Si (111) by solid phase epitaxy

Run Xu, Jiaming Xie, Minyan Tang, Yanyan Zhu, Lin-jun Wang

Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79952E (2011) https://doi.org/10.1117/12.888362
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China

Abstract

The Si overlayers were grown by solid phase epitaxy on the atomically smooth Er₂O₃ (111) films, which is prepared on the Si (111) substrate in optimum conditions. The twin structure was observed in the spot-like reflective high energy electron diffraction (RHEED) patterns. The rough surface of Si overlayer, as identified by both RHEED results and Atomic force microscopy (AFM) images, indicated a three dimensional growth mode in contrast to the two dimensional growth mode of Er₂O₃ on the Si (111) substrate. The physical origin of three dimensional grow is given based on the interfacial energy argument.

Citation Download Citation

Run Xu, Jiaming Xie, Minyan Tang, Yanyan Zhu, and Lin-jun Wang "The growth of Si overlayers on Er₂O₃(111)/Si (111) by solid phase epitaxy", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952E (18 February 2011); https://doi.org/10.1117/12.888362

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