18 February 2011 The growth of Si overlayers on Er2O3(111)/Si (111) by solid phase epitaxy
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79952E (2011) https://doi.org/10.1117/12.888362
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
The Si overlayers were grown by solid phase epitaxy on the atomically smooth Er2O3 (111) films, which is prepared on the Si (111) substrate in optimum conditions. The twin structure was observed in the spot-like reflective high energy electron diffraction (RHEED) patterns. The rough surface of Si overlayer, as identified by both RHEED results and Atomic force microscopy (AFM) images, indicated a three dimensional growth mode in contrast to the two dimensional growth mode of Er2O3 on the Si (111) substrate. The physical origin of three dimensional grow is given based on the interfacial energy argument.
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Run Xu, Run Xu, Jiaming Xie, Jiaming Xie, Minyan Tang, Minyan Tang, Yanyan Zhu, Yanyan Zhu, Lin-jun Wang, Lin-jun Wang, } "The growth of Si overlayers on Er2O3(111)/Si (111) by solid phase epitaxy", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952E (18 February 2011); doi: 10.1117/12.888362; https://doi.org/10.1117/12.888362
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