18 February 2011 Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79952T (2011) https://doi.org/10.1117/12.888229
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
We present a summary of our work towards developing spectroscopic and nuclear imaging detectors using epitaxially grown thick single crystal CdTe layers on Si substrates. High crystalline quality thick single crystal CdTe layers (>260 μm) were obtained where the growth rates could be varied from 10-70 μm/h by adjusting the precursor's flow rates, ratios and the substrate temperatures. Both high resistivity p-like CdTe layers and highly conductive n+-CdTe layers with controlled electrical properties were obtained using iodine as a dopant, but using different growth conditions. Detectors were fabricated in a p-CdTe/n+-CdTe/n+-Si heterojunction diode structure, which demonstrated their energy discrimination capability by resolving energy peaks from a gamma source. Details on the growth characteristics and the fabrication process for a 2-D imaging array are presented.
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K. Yasuda, K. Yasuda, M. Niraula, M. Niraula, Y. Agata, Y. Agata, "Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952T (18 February 2011); doi: 10.1117/12.888229; https://doi.org/10.1117/12.888229
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