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18 February 2011 Sol-gel derived contamination resistant antireflective coatings
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Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79952U (2011) https://doi.org/10.1117/12.888178
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
Silica-based sol-gel antireflective (AR) optical coatings are critical components for high peak power laser systems. It is well known that water vapor and volatile organic compounds in both the laser bay and target bay environments will reduce the antireflective efficiency and laser-damage resistance of the sol-gel AR coating. In this study, alkylation with organosilanes in the vapor state was investigated. Sol-gel AR coatings were vapor-phase treated with hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) at room temperature, and the resulting post-treated sol-gel AR coatings were tested for their resistance to contamination by a series of volatile organic compounds. Contact angle measurements were taken to discern the degree of silanization. After the vapor treatment of sol-gel AR coatings with organosilanes, the spectral performance of the coatings were analyzed by spectrophotometer, both before and after the exposure to volatile organic compounds. It is found that the coatings treated with ammonia and HMDS show a better contamination resistant capability. After being contaminated 70 hours with hexane, the transmittance of the coatings presents no obvious decrease. And the vapor treatment produces an increase in their damage threshold at 1064 nm (10ns pulse width) as compared to untreated control samples.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Shen, Yuan Liu, Guangming Wu, Bin Zhou, Zhihua Zhang, and Yumei Zhu "Sol-gel derived contamination resistant antireflective coatings", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952U (18 February 2011); https://doi.org/10.1117/12.888178
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