28 February 2011 Analysis of internal crack propagation in silicon due to permeable pulse laser irradiation: study on processing mechanism of stealth dicing
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Proceedings Volume 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010; 799603 (2011) https://doi.org/10.1117/12.887431
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies 2010, 2010, St. Petersburg, Russian Federation
Abstract
Stealth dicing (SD) is an innovative dicing method developed by Hamamatsu Photonics K.K. In the SD method, a permeable nanosecond laser is focused inside a silicon wafer and scanned horizontally. A thermal shock wave propagates every pulse toward the side to which the laser is irradiated, then a high dislocation density layer is formed inside the wafer after the thermal shock wave propagation. In our previous study, it was concluded that an internal crack whose initiation is a dislocation is propagated when the thermal shock wave by the next pulse overlaps with this layer partially. In the experimental result, the trace that a crack is progressed gradually step by step was observed. In this study, the possibility of internal crack propagation by laser pulses was investigated. A two-dimensional thermal stress analysis based on the linear fracture mechanics was conducted using the stress distribution obtained by the axisymmetric thermal stress analysis. As a result, the validity of the hypothesis based on a heat transfer analysis result previously presented was supported. Also it was concluded that the internal crack is propagated by at least two pulses.
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Etsuji Ohmura, Yuta Kawahito, Kenshi Fukumitsu, Junji Okuma, Hideki Morita, "Analysis of internal crack propagation in silicon due to permeable pulse laser irradiation: study on processing mechanism of stealth dicing", Proc. SPIE 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010, 799603 (28 February 2011); doi: 10.1117/12.887431; https://doi.org/10.1117/12.887431
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