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28 February 2011 Stochastic fields in a nanoscale vicinity of the ionic crystal surfaces at finite temperatures
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Proceedings Volume 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010; 79960M (2011) https://doi.org/10.1117/12.887432
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies 2010, 2010, St. Petersburg, Russian Federation
Abstract
We present the results of analytical and numerical study of spatial distribution of the fluctuating electric field near the surface of a model ionic crystal as a function of temperature. The potential variance is calculated and it is shown that the fluctuating field power density decays outside of the crystal as h-3, where h is the distance from the crystal suface. When h > 6a (a is the lattice period), the fluctuating field exceeds the static field, which decays exponentially. At these distances, the chatacteristic strength of the fluctuating field lies in the range of 106V/cm. The fluctuating potential variance squared grows linearly at high temperatures and does not vanish at 0 K. The effect of the fluctating electric field on formation of nanostructures on the crystal surface is considered.
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S. G. Przhibel'skii "Stochastic fields in a nanoscale vicinity of the ionic crystal surfaces at finite temperatures", Proc. SPIE 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010, 79960M (28 February 2011); https://doi.org/10.1117/12.887432
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