28 February 2011 Femtosecond dynamics of optical properties of semiconductor
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Proceedings Volume 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010; 79960P (2011) https://doi.org/10.1117/12.886704
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies 2010, 2010, St. Petersburg, Russian Federation
Abstract
Dynamics of optical properties of semiconductor during action of femtosecond laser pulse is theoretically studied taking into account different types of electron emission. Calculated spatial distribution of dielectric permeability is modelled in multi-layered samples and experiment on surface plasmon resonance is performed. The experimental data is compared to surface periodic micro-structures experimentally observed in silicon under femtosecond laser action.
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Roman V. Dyukin, Roman V. Dyukin, George A. Martsinovskiy, George A. Martsinovskiy, Innokenty Yu. Khvan, Innokenty Yu. Khvan, Galina D. Shandybina, Galina D. Shandybina, Eugeny B. Yakovlev, Eugeny B. Yakovlev, Igor D. Nikiforov, Igor D. Nikiforov, } "Femtosecond dynamics of optical properties of semiconductor", Proc. SPIE 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010, 79960P (28 February 2011); doi: 10.1117/12.886704; https://doi.org/10.1117/12.886704
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