28 February 2011 Effect of laser irradiation on the structures properties such as SiO2/Si
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Proceedings Volume 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010; 79960S (2011); doi: 10.1117/12.889523
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies 2010, 2010, St. Petersburg, Russian Federation
Abstract
In this paper the results of research of influence of laser emission on electrophysical and structural parameters of SiO2/Si system are given. Research samples were irradiated with optical fiber YLP-laser (λ=1,06 μm) with 250ns pulse length. Power of emission in impulse was (2-4) - 7,13 Wt/sm2 . As experimental sample thermal oxidated silicon base KEF-4,5 was used, which crystallographic plane was similar to (100). As a result of experiments it is shown that laser irradiation of Si/SiO2 system can form SiO2+silicon nanoclusters system on silicon film. Nano-engineering of SiO2/Si system is accompanied by essential changing of electrophysical properties of initial MOS structures.
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V. P. Veiko, A. M. Skvortsov, V. I. Sokolov, Quang Tung Pham, R. A. Khalecki, E. I. Efimov, "Effect of laser irradiation on the structures properties such as SiO2/Si", Proc. SPIE 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010, 79960S (28 February 2011); doi: 10.1117/12.889523; https://doi.org/10.1117/12.889523
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KEYWORDS
Silicon

Silica

Laser irradiation

Oxides

Nanocomposites

Molybdenum

Visible radiation

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