4 March 2011 Memory elements based on thin film field-effect transistor
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Proceedings Volume 7998, International Conference on Laser Physics 2010; 79980A (2011) https://doi.org/10.1117/12.891259
Event: International Conference on Laser Physics 2010, 2010, Ashtarak, Armenia
Abstract
We report the preparation and investigation of heterostructures based on ferroelectric crystals and semiconductor films. The ferroelectric field effect transistor with high transparency for visible light and high field mobility of the charge carriers has been fabricated using ZnO:Li films as a transistor channel. The possibility of use of ferroelectric field effect transistor based on ZnO:Li films as bistable element for information writing has been shown.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Natella R. Aghamalyan, Natella R. Aghamalyan, Ruben K. Hovsepyan, Ruben K. Hovsepyan, Evgenia A. Kafadaryan, Evgenia A. Kafadaryan, Silva I. Petrosyan, Silva I. Petrosyan, Armen R. Poghosyan, Armen R. Poghosyan, Eduard S. Vardanyan, Eduard S. Vardanyan, } "Memory elements based on thin film field-effect transistor", Proc. SPIE 7998, International Conference on Laser Physics 2010, 79980A (4 March 2011); doi: 10.1117/12.891259; https://doi.org/10.1117/12.891259
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