4 March 2011 Electrical properties of DLC- (n, p)-Si heterojunctions fabricated by ion-assisted plasma-enhanced deposition and pulsed laser deposition methods
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Proceedings Volume 7998, International Conference on Laser Physics 2010; 799813 (2011) https://doi.org/10.1117/12.890858
Event: International Conference on Laser Physics 2010, 2010, Ashtarak, Armenia
Abstract
Electrical characteristics of DLC- (n, p)-Si heterojunctions fabricated by ion-assisted plasma-enhanced deposition and pulsed laser deposition methods were investigated. The mechanisms of carrier flow across the fabricated junctions were analyzed. Keywords: ion-assisted plasma-enhanced deposition, pulsed laser deposition, DLC- (n, p)-Si heterojunctions, currentvoltage & capacitance- voltage characteristics.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhosef R. Panosyan, Zhosef R. Panosyan, Serjik S. Voskanyan, Serjik S. Voskanyan, Yerem V. Yengibaryan, Yerem V. Yengibaryan, Karapet E. Avjyan, Karapet E. Avjyan, Ashot M. Khachatryan, Ashot M. Khachatryan, Lenrik A. Matevosyan, Lenrik A. Matevosyan, } "Electrical properties of DLC- (n, p)-Si heterojunctions fabricated by ion-assisted plasma-enhanced deposition and pulsed laser deposition methods", Proc. SPIE 7998, International Conference on Laser Physics 2010, 799813 (4 March 2011); doi: 10.1117/12.890858; https://doi.org/10.1117/12.890858
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