Photomask Degradation In Contact Printing Of LSI Circuits Onto Silicon Wafers

Wayne R. Pratt; M. P. Risen

doi:10.1117/12.954846

20 September 1976 Photomask Degradation In Contact Printing Of LSI Circuits Onto Silicon Wafers

Wayne R. Pratt, M. P. Risen

Author Affiliations +

Proceedings Volume 0080, Developments in Semiconductor Microlithography; (1976) https://doi.org/10.1117/12.954846
Event: Developments in Semiconductor Microlithography, 1976, San Jose, CA, United States

Abstract

This paper discusses the results of an experiment which quantifies the impact of photo-mask materials - both glass substrate and thin film - on mask life and wafer yield in a contact printing process. Chromium, DC triode sputtered iron oxide and RF sputtered iron oxide were deposited on soda lime, alumina soda lime and borosilicate glass substrates making up a matrix of seven mask types. Mask degradation was caused by bringing test wafers into contact with each mask and then exposing them. Masks were inspected at specific intervals as printing progressed; defects were classified and tabulated at each inspection. The results are presented graphically for comparison of each photomask system. The experiment was statistically designed to provide a 95% confidence level in the overall results.

Citation Download Citation

Wayne R. Pratt and M. P. Risen "Photomask Degradation In Contact Printing Of LSI Circuits Onto Silicon Wafers", Proc. SPIE 0080, Developments in Semiconductor Microlithography, (20 September 1976); https://doi.org/10.1117/12.954846

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