Improved Longitudinal Mode Selectivity In Semiconductor Lasers With A Multi-Element Resonator

Paul G. Baumann

doi:10.1117/12.941187

22 September 1987 Improved Longitudinal Mode Selectivity In Semiconductor Lasers With A Multi-Element Resonator

Paul G. Baumann

Proceedings Volume 0800, Novel Optoelectronic Devices; (1987) https://doi.org/10.1117/12.941187
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

A simple one-dimensional theory predicts mode selective properties of a semiconductor laser structure consisting of several equally long elements which are separated by regions with different effective refractive index and gain. Measurements on realized lasers with etched and unpumped regions interrupting a ridge waveguide confirm this theory. The best laser shows a side mode suppression of about 25 dB at 1.5xIth and maintains single mode operation under high speed direct modulation.

Citation Download Citation

Paul G. Baumann "Improved Longitudinal Mode Selectivity In Semiconductor Lasers With A Multi-Element Resonator", Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); https://doi.org/10.1117/12.941187

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