State of the arts of Ga[sub]x[/sub]In[sub]1-x[/sub]As[sub]y[/sub]P [sub]1-y[/sub]-InP laser grown By Low-Pressure Metalorganic Chemical Vapor Deposition

M. Razeghi; F. Omnes; P. Maurel; R. Blondeau; M. Krakowski

doi:10.1117/12.941180

22 September 1987 State of the arts of Ga_xIn_1-xAs_yP _1-y-InP laser grown By Low-Pressure Metalorganic Chemical Vapor Deposition

M. Razeghi, F. Omnes, P. Maurel, R. Blondeau, M. Krakowski

Author Affiliations +

Proceedings Volume 0800, Novel Optoelectronic Devices; (1987) https://doi.org/10.1117/12.941180
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

Very high quality GaxIn1-xAsyP1-y (0 < x < 0.47, 0 < y < 1) lattice matched to InP heterojunctions, quantum-wells, and superlattices has been grown by the low pressure metal-organic chemical vapor deposition growth technique. High quality GaInAsP-InP double heterojunction lasers emitting at 1.3 μm and 1.55 μm have been fabricated with threshold current density as low as 430 A/cm2 and 500 Å/cm2, respectively, for a cavity length of 400 μm. Room temperature CW threshold current as low as 6 mA, 8 mA and 12 mA have been measured (for stripe buried devices with cavity length of 300 μm and stripe width of 1 μm) for 1.3 μm, 1.5 μm and 1.55 μm DEB laser, respectively. Phase-locked high power laser arrays of GaInAsP-InP emitting at 1.3 μm have been fabricated with material grown by two step low pressure metalorganic chemical vapor deposition.

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M. Razeghi, F. Omnes, P. Maurel, R. Blondeau, and M. Krakowski "State of the arts of Ga_xIn_1-xAs_yP _1-y-InP laser grown By Low-Pressure Metalorganic Chemical Vapor Deposition", Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); https://doi.org/10.1117/12.941180

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