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8 September 2011 SOI back reflector for Tb-doped oxide electroluminescent devices
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Proceedings Volume 8007, Photonics North 2011; 800710 (2011)
Event: Photonics North 2011, 2011, Ottawa, Canada
Electroluminescent devices based on light emission from Tb-doped SiO2 incorporated in a MOS capacitor structure have been formed on SOI substrates. It is shown that with appropriate choice of Si film and buried oxide thickness the SOI substrate can serve as a quarter-wave high-low-high index back reflector. Analysis predicts this back reflector can boost total light output integrated over the Tb emission spectrum by approximately 35% compared to a bulk substrate control device. Experimental devices using 100 nm thick PECVD SiO2 emitting layers doped with 1% Tb were fabricated on substrates with nominal 32 and 108 nm Si film thickness (corresponding to approximately λ/4 and 3λ/4 at the Tb emission peak). The Si films were doped to 1019 - 1020 cm-3 by As implantation. Uniform bright green electroluminescence was obtained from 250 μm square devices, demonstrating that current crowding is not an issue even with such a thin Si film. The comparison of output spectra for thick and thin Si films demonstrates that optical absorption in the heavily doped Si film does not seriously degrade the light output of the devices.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harjinder Singh Saini, T. W. MacElwee, A. Rankin, J. Wojcik, A. M. Miles, N. G. Tarr, and P. Mascher "SOI back reflector for Tb-doped oxide electroluminescent devices", Proc. SPIE 8007, Photonics North 2011, 800710 (8 September 2011);

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