8 September 2011 Growth of large crystalline CuInSe2 ingots
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Proceedings Volume 8007, Photonics North 2011; 80071T (2011) https://doi.org/10.1117/12.902333
Event: Photonics North 2011, 2011, Ottawa, Canada
Abstract
In previous Bridgman growth of CuInSe2 ingots, weighted amounts of high purity materials are introduced together into quartz ampoules. During the initial heating, vigorous reaction occurs mainly between In and Se leading to a sudden increase in the temperature and hence the vapor pressure. Explosion often occurs when the total amount of materials exceeds 10 grams even with quartz ampoules with a wall thickness greater than 1 mm. Although the explosion can be avoided by having very slow initial heating rate, the total materials are still limited to 30 g or less for each growth run. Due to the limited materials, the dimensions of ingots grown in the previous experiments have been limited. In the present work, we have developed a method to control the reaction between Se and In in the initial heating stage and hence to reduce the rate of heat release in the exothermic reaction. Using this improved method, the limit on the material amounts can be increased. Crystalline ingots with a total weight of 300 g and diameter 3 cm have been grown.
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Julia Qiu, Andy Shih, Yi Fan Qi, Sunyoung Park, Zetian Mi, Ishiang Shih, "Growth of large crystalline CuInSe2 ingots", Proc. SPIE 8007, Photonics North 2011, 80071T (8 September 2011); doi: 10.1117/12.902333; https://doi.org/10.1117/12.902333
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