8 September 2011 Metal contacts to p-type crystalline CuInSe2
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Proceedings Volume 8007, Photonics North 2011; 80071X (2011) https://doi.org/10.1117/12.905162
Event: Photonics North 2011, 2011, Ottawa, Canada
Bilayers of metal contacts were deposited on p-type monocrystalline copper indium diselenide (CuInSe2) and the resistance between two contacts were measured to find low resistance metal contacts on crystalline CuInSe2. The first metal layer was Ni, Pt, Se, or Te and the second metal layer was Au, Ag, Al or Cu. It was observed that the resistance reduced when the surface of crystalline CuInSe2 were etched before metal deposition with a solution containing H2SO4(1 %, w/w) and CrO3 (1 %, w/w). It was confirmed that the resistance increases after heat-treatments at high temperature. The stability of the metal contacts in room air was estimated from the resistance measured for a period of over 20 days.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sunyoung Park, Clifford H. Champness, Zetian Mi, Ishiang Shih, "Metal contacts to p-type crystalline CuInSe2", Proc. SPIE 8007, Photonics North 2011, 80071X (8 September 2011); doi: 10.1117/12.905162; https://doi.org/10.1117/12.905162

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