Defects In Semiconductors Under Repetitive Medium Power Laser Irradiation Conditions

M. Wautelet; C. Antoniadis; P. Quenon; L. D. Laude.

doi:10.1117/12.941243

22 September 1987 Defects In Semiconductors Under Repetitive Medium Power Laser Irradiation Conditions

M. Wautelet, C. Antoniadis, P. Quenon, L. D. Laude.

Proceedings Volume 0801, High Power Lasers: Sources, Laser-Material Interactions, High Excitations, and Fast Dynamics; (1987) https://doi.org/10.1117/12.941243
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

When a semiconductor is irradiated many times by means of a medium power laser beam, it is expected that the cumulative effects of small phenomena occuring per pulse may give rise to dramatic effects. The problem is approached here via a theoretical analysis of the behaviour of defects under repetitive pulsed laser irradiation. Preliminary results indicate how demixing depends on the thermodynamical parameters for diffusion of defects. The roles of temperature gradients are analyzed carefully. The effects of optical excitation of localized states on the lifetime of devices are also discussed.

Citation Download Citation

M. Wautelet, C. Antoniadis, P. Quenon, and L. D. Laude. "Defects In Semiconductors Under Repetitive Medium Power Laser Irradiation Conditions", Proc. SPIE 0801, High Power Lasers: Sources, Laser-Material Interactions, High Excitations, and Fast Dynamics, (22 September 1987); https://doi.org/10.1117/12.941243

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