Excimer laser induced transformation of Ge~Se thin films

A. Jadin; M. Wautelet; C. Antoniadis; L. D. Laude

doi:10.1117/12.941235

22 September 1987 Excimer laser induced transformation of Ge-Se thin films

A. Jadin, M. Wautelet, C. Antoniadis, L. D. Laude

Proceedings Volume 0801, High Power Lasers: Sources, Laser-Material Interactions, High Excitations, and Fast Dynamics; (1987) https://doi.org/10.1117/12.941235
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

Thin films of Ge or/and Se are irradiated by means of an excimer KrF laser beam. It is evidenced that such an irradiation gives rise to different transformations, when the energy density and the number of laser pulses are varied. Depending on the irradiation parameters and the starting stoichiometry of the films, either synthesis or ablation are observed. In the case of ablation, evaporation rates are very high. This cannot be explained via a purely thermal effect. A model based on electronic excitation is proposed.

Citation Download Citation

A. Jadin, M. Wautelet, C. Antoniadis, and L. D. Laude "Excimer laser induced transformation of Ge-Se thin films", Proc. SPIE 0801, High Power Lasers: Sources, Laser-Material Interactions, High Excitations, and Fast Dynamics, (22 September 1987); https://doi.org/10.1117/12.941235

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