Optical spectroscopy as a monitor of thin film growth in sputtering

Noemi Abundiz; Angeles Perez; Víctor García; Roberto Machorro

doi:10.1117/12.902029

2 November 2011 Optical spectroscopy as a monitor of thin film growth in sputtering

Noemi Abundiz, Angeles Perez, Víctor García, Roberto Machorro

Proceedings Volume 8011, 22nd Congress of the International Commission for Optics: Light for the Development of the World; 80112N (2011) https://doi.org/10.1117/12.902029
Event: International Commission for Optics (ICO 22), 2011, Puebla, Mexico

Abstract

Line intensity ratio has been used in astronomy to calculate plasma density and temperature. This procedure is applied to monitor thin film growth in plasma-assisted deposition, it provides very useful information such as density and temperature of the plasma. The propose of this study is monitor variations of the plasma during deposition, using wide field optical spectroscopy and establish a relation with thin film stoichiometry. We report the preparation of inhomogeneous SiO_xN_y thin films, by sputtering.

Citation Download Citation

Noemi Abundiz, Angeles Perez, Víctor García, and Roberto Machorro "Optical spectroscopy as a monitor of thin film growth in sputtering", Proc. SPIE 8011, 22nd Congress of the International Commission for Optics: Light for the Development of the World, 80112N (2 November 2011); https://doi.org/10.1117/12.902029

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