Thermo-electrically cooled shortwave infrared and longwave infrared dual-band quantum-dot photodetector

Jarrod Vaillancourt; Puminun Vasinajindakaw; Xuejun Lu; Xifeng Qian; Shivashankar R Vangala; William D. Goodhue

doi:10.1117/12.887363

20 May 2011 Thermo-electrically cooled shortwave infrared and longwave infrared dual-band quantum-dot photodetector

Jarrod Vaillancourt, Puminun Vasinajindakaw, Xuejun Lu, Xifeng Qian, Shivashankar R Vangala, William D. Goodhue

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 80120O (2011) https://doi.org/10.1117/12.887363
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

We report a longwave infrared quantum dot infrared photodetector working at room temperature (RT) (298K). A photoresponsivity and photodetectivity of 0.02A/W and 9.0x10⁶ cmHz^1/2/W was achieved at 298K with a low bias voltage of -0.1V. The RT QDIP avoids bulk and heavy cryogenic cooling systems and thus enables the development of ultra-compact IR sensing and imaging systems.

Citation Download Citation

Jarrod Vaillancourt, Puminun Vasinajindakaw, Xuejun Lu, Xifeng Qian, Shivashankar R Vangala, and William D. Goodhue "Thermo-electrically cooled shortwave infrared and longwave infrared dual-band quantum-dot photodetector", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80120O (20 May 2011); https://doi.org/10.1117/12.887363

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