20 May 2011 Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-XSbX alloys
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Abstract
GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-XSbXepilayers with lattice constants up to 2.1 % larger than that of GaSb. The InAsSb buffer layer was used to grow InAs0.12Sb0.88 layer on InSb. The structural and optical characterization of 1-μm thick InAs1-xSbx layers was performed together with measurements of the carrier lifetime.
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G. Belenky, G. Belenky, G. Kipshidze, G. Kipshidze, D. Donetsky, D. Donetsky, S. P. Svensson, S. P. Svensson, W. L. Sarney, W. L. Sarney, H. Hier, H. Hier, L. Shterengas, L. Shterengas, D. Wang, D. Wang, Y. Lin, Y. Lin, } "Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-XSbX alloys", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80120W (20 May 2011); doi: 10.1117/12.883625; https://doi.org/10.1117/12.883625
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