21 May 2011 High performance dual-band InAs/GaSb SLS detectors with nBn and pBp architectures
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Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 80120X (2011); doi: 10.1117/12.882399
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States
Abstract
We report on dual-band (mid-/long-wave infrared) InAs/GaSb strained layer superlattice detector with nBn and pBp architectures. Two band response was registered with 50% cut-off wavelengths of 5μm (both nBn and pBp detectors) and 9μm (nBn)/10μm (pBp). The maximum peak responsivity of MWIR absorber equal to 1.6 A/W (at λ = 5 μm and Vb = +1 V) and LWIR absorber equal to 1.2 A/W (at λ = 10 μm and Vb = -1 V) for nBn detector, with the corresponding values of D* were 1.2 x 1011 Jones and 1.2 x 1010Jones for MWIR and LWIR absorbers, respectively (77 K). The maximum values of quantum efficiency were estimated to 36% (MWIR) and 15% (LWIR) at Vb = +1V and Vb = -1V. For pBp detector, the responsivity equal to 1.6 A/W (at λ = 5 μm and Vb = +0.4 V) and 1.8 A/W (at λ = 9 μm and Vb = -0.7 V) for MWIR and LWIR absorbers was achieved with corresponding values of specific detectivity 5 x 1011 Jones and 2.6 x 1010Jones, respectively. The maximum values of quantum efficiency were estimated to 41% (MWIR) and 25% (LWIR) at Vb = +0.4V and Vb = -0.7V. Moreover, the diffusion-limited behavior of dark current at higher temperatures was observed for MWIR absorber for pBp detector. The overall performance of the dual-band InAs/GaSb SLS detectors with investigated designs showed comparable (nBn design) and superior (pBp design) performance to the QWIP detectors both in MWIR and LWIR bands and comparable performance to MCT detectors in MWIR band (nBn and pBp detector designs).
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E. Plis, N. Gautam, S. Myers, S. S. Krishna, E. P Smith, S. Johnson, S. Krishna, "High performance dual-band InAs/GaSb SLS detectors with nBn and pBp architectures", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80120X (21 May 2011); doi: 10.1117/12.882399; https://doi.org/10.1117/12.882399
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KEYWORDS
Sensors

Laser sintering

Mid-IR

Long wavelength infrared

Gallium antimonide

Superlattices

Quantum efficiency

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