20 May 2011 Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors
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Abstract
Recent efforts in developing InAs/GaSb strained-layer superlattices for LWIR detectors are described. The structural properties of the devices grown by MBE at HRL were evaluated using optical microscopy, x-ray diffraction, and atomic force microscopy. Epilayer roughness and surface morphology are briefly described. Small format focal plane arrays were fabricated to serve as a baseline for device study, and to determine the effects of underfill epoxy on detector performance. A novel approach for epilayer transfer on silicon is also presented.
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Sevag Terterian, Hasan Sharifi, Pierre-Yves Delaunay, Brett Nosho, Mark Roebuck, Rajesh Rajavel, "Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801212 (20 May 2011); doi: 10.1117/12.886503; https://doi.org/10.1117/12.886503
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