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20 May 2011 Performances analysis of symmetrical and asymmetrical InAs/GaSb superlattice pin photodiode
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Symmetric and asymmetric mid-wavelength infrared (MWIR) InAs/GaSb superlattice (SL) pin photodiode were fabricated by Molecular Beam Epitaxy (MBE) on p-type GaSb substrate and characterized as a function of temperature. The symmetric SL structure was made of 8 InAs monolayers (MLs) and 8 GaSb MLs and exhibits at 80K a cut-off wavelength (λc) of 4.5μm, while the asymmetric SL design was composed of 7.5 InAs MLs and 3.5 GaSb MLs for λc = 5.5μm at 80K. Optical characterizations made of photoluminescence as a function of temperature and room temperature absorption spectra were performed on these two kinds of structures. Several electrical characterizations including dark current and capacitance-voltage measurements were also carried out on single detectors in the temperature range [77K-300K]. Results obtained were compared and analyzed in order to define optimized SL structure design for the high performance in the MWIR domain.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Cervera, R. Taalat, P. Christol, J. B. Rodriguez, K. Jaworowicz, I. Ribet-Mohamed, L. Konczewicz, and S. Contreras "Performances analysis of symmetrical and asymmetrical InAs/GaSb superlattice pin photodiode", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801213 (20 May 2011);

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