Electric characteristic of nickel oxide film for the mirobolometer

Yong Soo Lee; Dong Soo Kim; Young-Chul Jung; Hee Chul Lee

doi:10.1117/12.886913

20 May 2011 Electric characteristic of nickel oxide film for the mirobolometer

Yong Soo Lee, Dong Soo Kim, Young-Chul Jung, Hee Chul Lee

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 80121P (2011) https://doi.org/10.1117/12.886913
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

In this report, we describe the two different nickel oxide film formation processes for microbolometer application: the heat treatment of nickel metal and the reactive sputtering. Nickel oxide films obtained by the heat treatment of nickel show high TCR(about -3.2/°C) and low 1/f noise characteristic. The reactively sputtered nickel oxide films have the wide range of resistivity according to the sputtering vacuum level, time, and O₂/Ar gas partial pressure. The acquired TCR of sputtered films are in the range of -1.4%/°C and -3.45%°C. And the 1/f noise parameter k, which shows the performance between VOx and a-Si, is as low as 8.5×10^-13 at the TCR of -1.75%/°C. Acquired nickel oxide films were analyzed from XRD, AFM methods, and etc. It is regarded that the resistivity variation of polycrystalline nickel oxide film comes from nonstoichiometric property of nickel and oxygen atoms. We simulated the optic and membrane structure for predicting the performance of a microbolometer with nickel oxide film. The estimated NETD(noise equivalent temperature difference) for the 50μmx50μm size of pixel is NETD below 20mK.

Citation Download Citation

Yong Soo Lee, Dong Soo Kim, Young-Chul Jung, and Hee Chul Lee "Electric characteristic of nickel oxide film for the mirobolometer", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80121P (20 May 2011); https://doi.org/10.1117/12.886913

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