20 May 2011 IR CMOS: ultrafast laser-enhanced silicon detection
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Abstract
SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral sensitivity into the near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision capability comparable to that of current image-intensifier based night vision goggles. The process is compatible with established CMOS manufacturing infrastructure and has the promise of much lower cost than competing approaches. The measured thin layer quantum efficiency is as much as 10x that of incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. U. Pralle, J. E. Carey, H. Homayoon, J. Sickler, X. Li, J. Jiang, D. Miller, C. Palsule, J. McKee, "IR CMOS: ultrafast laser-enhanced silicon detection", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801222 (20 May 2011); doi: 10.1117/12.882867; https://doi.org/10.1117/12.882867
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